CJU02N80 Datasheet and Replacement
Type Designator: CJU02N80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 60 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 6.3 Ohm
Package: TO-252
CJU02N80 Datasheet (PDF)
cju02n80.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU02N80 N-Channel Power MOSFET TO-252-2L GENERAL DESCRIPTION The CJU02N80 is an N-channel mode power MOSFET using advanced technology to provide costomers with planar stripe. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also
cju02n65.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU02N65 N-Channel Power MOSFET TO-252-2L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hig
cju02n60.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU02N60 N-Channel Power MOSFET TO-252-2L General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed 1. GATE 2. DRAIN to withsta
Datasheet: CJQ4438 , CJQ4459 , CJQ9435 , CJU01N60 , CJU01N65B , CJU01N80 , CJU02N60 , CJU02N65 , IRFZ44 , CJU03N80 , CJU04N60 , CJU04N60A , CJU04N65 , CJU04N65A , CJU05N60 , CJU05N60B , CJU10N10 .
History: BSC014N04LS | FQP9N15
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History: BSC014N04LS | FQP9N15



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