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CJU04N60 Spec and Replacement


   Type Designator: CJU04N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO-252

 CJU04N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CJU04N60 Specs

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CJU04N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU04N60 600V N-Channel Power MOSFET TO-252-2L General Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode wigh fast recovery time. Desighed for high... See More ⇒

 0.1. Size:307K  jiangsu
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CJU04N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU04N60A N-Channel Power MOSFET TO-252-2L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hi... See More ⇒

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CJU04N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU04N65A N-Channel Power MOSFET TO-252-2L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hi... See More ⇒

 7.2. Size:378K  jiangsu
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CJU04N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU04N65 N-Channel Power MOSFET TO-252-2L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hig... See More ⇒

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Detailed specifications: CJQ9435 , CJU01N60 , CJU01N65B , CJU01N80 , CJU02N60 , CJU02N65 , CJU02N80 , CJU03N80 , IRF1404 , CJU04N60A , CJU04N65 , CJU04N65A , CJU05N60 , CJU05N60B , CJU10N10 , CJU4828 , CJV01N60 .

Keywords - CJU04N60 MOSFET specs

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