All MOSFET. CJU04N65 Datasheet

 

CJU04N65 Datasheet and Replacement


   Type Designator: CJU04N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO-252
 

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CJU04N65 Datasheet (PDF)

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CJU04N65

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU04N65 N-Channel Power MOSFET TO-252-2L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hig

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CJU04N65

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU04N65A N-Channel Power MOSFET TO-252-2L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hi

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 cju04n60a.pdf pdf_icon

CJU04N65

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU04N60A N-Channel Power MOSFET TO-252-2L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hi

 7.2. Size:411K  jiangsu
 cju04n60.pdf pdf_icon

CJU04N65

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU04N60 600V N-Channel Power MOSFET TO-252-2LGeneral Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode wigh fast recovery time. Desighed for high

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Datasheet: CJU01N65B , CJU01N80 , CJU02N60 , CJU02N65 , CJU02N80 , CJU03N80 , CJU04N60 , CJU04N60A , IRF640N , CJU04N65A , CJU05N60 , CJU05N60B , CJU10N10 , CJU4828 , CJV01N60 , CJV01N65B , CJW1012 .

History: 2SK2643-01 | 7N65KL-T2Q-T | IXTR90P10P | SSM3K335R | NCV8408 | AP4434GM-HF | APT47N60BCFG

Keywords - CJU04N65 MOSFET datasheet

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