CTLDM7120-M832DS Datasheet. Specs and Replacement

Type Designator: CTLDM7120-M832DS  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.65 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TLM832DS

CTLDM7120-M832DS substitution

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CTLDM7120-M832DS datasheet

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 ctldm7120-m832ds.pdf pdf_icon

CTLDM7120-M832DS

CTLDM7120-M832DS SURFACE MOUNT www.centralsemi.com DUAL N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR SILICON MOSFET CTLDM7120-M832DS is an Enhancement-mode Dual N-Channel MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage. MARKING COD... See More ⇒

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 ctldm7120-m832d.pdf pdf_icon

CTLDM7120-M832DS

CTLDM7120-M832D SURFACE MOUNT www.centralsemi.com DUAL, N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR SILICON MOSFETS CTLDM7120-M832D is an Enhancement-mode Dual N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Volt... See More ⇒

 3.1. Size:456K  central
 ctldm7120-m621 ctldm7120-m621h.pdf pdf_icon

CTLDM7120-M832DS

CTLDM7120-M621H SURFACE MOUNT www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CTLDM7120-M621H is SILICON MOSFET an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage. MARKIN... See More ⇒

 3.2. Size:632K  central
 ctldm7120-m563.pdf pdf_icon

CTLDM7120-M832DS

CTLDM7120-M563 SURFACE MOUNT www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CTLDM7120-M563 SILICON MOSFET is a high quality, enhancement-mode N-channel MOSFET packaged in a space saving 1.6 x 1.6mm TLM surface mount package. This device is a TLM equivalent of the popular CMLDM7120G, SOT-563 device, featuring enhanced thermal characte... See More ⇒

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Detailed specifications: CTLDM3590, CTLDM7002A-M621, CTLDM7002A-M621H, CTLDM7003-M621, CTLDM7120-M563, CTLDM7120-M621, CTLDM7120-M621H, CTLDM7120-M832D, 2N7002, CTLDM7181-M832D, CTLDM7590, CTLDM8002A-M621, CTLDM8002A-M621H, CTLDM8120-M621H, CTLDM8120-M832D, CTLM7110-M832D, CTLM8110-M832D

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