CTLDM8002A-M621 Datasheet. Specs and Replacement

Type Designator: CTLDM8002A-M621  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.28 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 15 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TLM621

CTLDM8002A-M621 substitution

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CTLDM8002A-M621 datasheet

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 ctldm8002a-m621.pdf pdf_icon

CTLDM8002A-M621

CTLDM8002A-M621 SURFACE MOUNT www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR SILICON MOSFET CTLDM8002A-M621 is a Silicon P-Channel Enhancement-mode MOSFET in a small, thermally efficient, TLM 2x1mm package. MARKING CODE CN FEATURES Low rDS(on) TLM621 CASE Low VDS(on) Low Threshold Voltage APPLICATIONS Fast Switchi... See More ⇒

 0.2. Size:458K  central
 ctldm8002a-m621h.pdf pdf_icon

CTLDM8002A-M621

CTLDM8002A-M621H SURFACE MOUNT www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CTLDM8002A-M621H SILICON MOSFET is a very low profile (0.4mm) P-Channel enhancement-mode MOSFET in a small, thermal efficient, 1.5mm x 2mm TLM package. MARKING CODE CNC FEATURES Low rDS(on) TLM621H CASE Low VDS(on) APPLICATIONS Low Threshold V... See More ⇒

 8.1. Size:418K  central
 ctldm8120-m621h.pdf pdf_icon

CTLDM8002A-M621

CTLDM8120-M621H SURFACE MOUNT www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR SILICON MOSFET CTLDM8120-M621H is a very low profile (0.4mm) P-Channel enhancement-mode MOSFET in a small, thermally efficient, 1.5mm x 2mm TLM package. MARKING CODE CNF TLM621H CASE Device is Halogen Free by design FEATURES APPLICATIONS Low rDS(ON)... See More ⇒

 8.2. Size:466K  central
 ctldm8120-m832d.pdf pdf_icon

CTLDM8002A-M621

CTLDM8120-M832D SURFACE MOUNT www.centralsemi.com DUAL, P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR SILICON MOSFETS CTLDM8120-M832D is an Enhancement-mode Dual P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Volt... See More ⇒

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Detailed specifications: CTLDM7003-M621, CTLDM7120-M563, CTLDM7120-M621, CTLDM7120-M621H, CTLDM7120-M832D, CTLDM7120-M832DS, CTLDM7181-M832D, CTLDM7590, IRLB4132, CTLDM8002A-M621H, CTLDM8120-M621H, CTLDM8120-M832D, CTLM7110-M832D, CTLM8110-M832D, CTM01N60, CTM02N60, CTM04N60

Keywords - CTLDM8002A-M621 MOSFET specs

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