All MOSFET. CWDM305PD Datasheet

 

CWDM305PD Datasheet and Replacement


   Type Designator: CWDM305PD
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 5.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm
   Package: SOIC-8
 

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CWDM305PD Datasheet (PDF)

 ..1. Size:654K  central
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CWDM305PD

CWDM305PDSURFACE MOUNTwww.centralsemi.comDUAL P-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CWDM305PD SILICON MOSFETis a dual high current P-channel enhancement-mode silicon MOSFET manufactured by the P-channel DMOS process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshol

 6.1. Size:647K  central
cwdm305p.pdf pdf_icon

CWDM305PD

CWDM305PSURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CWDM305P is SILICON MOSFETa high current P-channel enhancement-mode silicon MOSFET, manufactured by the P-channel DMOS process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshold voltage,

 7.1. Size:1143K  central
cwdm305nd.pdf pdf_icon

CWDM305PD

CWDM305NDSURFACE MOUNTwww.centralsemi.comDUAL N-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CWDM305ND is SILICON MOSFETa dual, high current N-channel enhancement-mode silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage.M

 7.2. Size:1136K  central
cwdm305n.pdf pdf_icon

CWDM305PD

CWDM305NSURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CWDM305N is SILICON MOSFETa high current N-channel enhancement-mode silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage.MARKING CODE:

Datasheet: CTN2302 , CTN2304 , CTP2303 , CWDM3011N , CWDM3011P , CWDM305N , CWDM305ND , CWDM305P , 10N65 , CXDM1002N , CXDM3069N , CXDM4060N , CXDM4060P , CXDM6053N , CZDM1003N , D55NF06 , D84DM2 .

History: OSG70R1K4FF | PMZ320UPE | SLD60R380S2 | 2SK2130 | IXTA4N150HV

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