CWDM305PD Datasheet. Specs and Replacement

Type Designator: CWDM305PD  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 5.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm

Package: SOIC-8

CWDM305PD substitution

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CWDM305PD datasheet

 ..1. Size:654K  central
cwdm305pd.pdf pdf_icon

CWDM305PD

CWDM305PD SURFACE MOUNT www.centralsemi.com DUAL P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CWDM305PD SILICON MOSFET is a dual high current P-channel enhancement-mode silicon MOSFET manufactured by the P-channel DMOS process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshol... See More ⇒

 6.1. Size:647K  central
cwdm305p.pdf pdf_icon

CWDM305PD

CWDM305P SURFACE MOUNT www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CWDM305P is SILICON MOSFET a high current P-channel enhancement-mode silicon MOSFET, manufactured by the P-channel DMOS process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshold voltage, ... See More ⇒

 7.1. Size:1143K  central
cwdm305nd.pdf pdf_icon

CWDM305PD

CWDM305ND SURFACE MOUNT www.centralsemi.com DUAL N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CWDM305ND is SILICON MOSFET a dual, high current N-channel enhancement-mode silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage. M... See More ⇒

 7.2. Size:1136K  central
cwdm305n.pdf pdf_icon

CWDM305PD

CWDM305N SURFACE MOUNT www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CWDM305N is SILICON MOSFET a high current N-channel enhancement-mode silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage. MARKING CODE ... See More ⇒

Detailed specifications: CTN2302, CTN2304, CTP2303, CWDM3011N, CWDM3011P, CWDM305N, CWDM305ND, CWDM305P, 4N60, CXDM1002N, CXDM3069N, CXDM4060N, CXDM4060P, CXDM6053N, CZDM1003N, D55NF06, D84DM2

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