DE150-101N09A Datasheet. Specs and Replacement

Type Designator: DE150-101N09A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: DE150

DE150-101N09A substitution

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DE150-101N09A datasheet

 ..1. Size:144K  ixys
 de150-101n09a.pdf pdf_icon

DE150-101N09A

DE150-101N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 100 V High dv/dt Nanosecond Switching ID25 = 9.0 A Ideal for Class C, D, & E Applications RDS(on) 0.16 Symbol Test Conditions Maximum Ratings PDC = 200 W TJ = 25 C to 150 C VDSS 100 V TJ = 25 C to 150 C; RGS = 1 M VDGR 100 V Continuous VGS 20 V Tran... See More ⇒

 6.1. Size:160K  ixys
 de150-102n02a.pdf pdf_icon

DE150-101N09A

DE150-102N02A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 1000 V High dv/dt Nanosecond Switching ID25 = 2 A Symbol Test Conditions Maximum Ratings RDS(on) = 7.8 TJ = 25 C to 150 C PDC = 200W VDSS 1000 V TJ = 25 C to 150 C; RGS = 1 M VDGR 1000 V Continuous VGS 20 V Transient VGSM 30 V Tc = 25 C ID25 2 A Tc = 25 C, pulse w... See More ⇒

 8.1. Size:142K  ixys
 de150-501n04a.pdf pdf_icon

DE150-101N09A

DE150-501N04A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 500 V High dv/dt Nanosecond Switching ID25 = 4.5 A RDS(on) 1.5 Symbol Test Conditions Maximum Ratings PDC = 200W TJ = 25 C to 150 C VDSS 500 V TJ = 25 C to 150 C; RGS = 1 M VDGR 500 V Continuous VGS 20 V Transient VGSM 30 V Tc = 25 C ID25 4.5 A... See More ⇒

 8.2. Size:144K  ixys
 de150-201n09a.pdf pdf_icon

DE150-101N09A

DE150-201N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 200 V High dv/dt Nanosecond Switching ID25 = 15 A Ideal for Class C, D, & E Applications RDS(on) 0.2 Symbol Test Conditions Maximum Ratings PDC = 200 W TJ = 25 C to 150 C VDSS 200 V TJ = 25 C to 150 C; RGS = 1 M VDGR 200 V Continuous VGS 20 V Transi... See More ⇒

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Detailed specifications: CXDM3069N, CXDM4060N, CXDM4060P, CXDM6053N, CZDM1003N, D55NF06, D84DM2, D84DN2, 20N50, DE150-102N02A, DE150-201N09A, DE150-501N04A, DE275-101N30A, DE275-102N06A, DE275-201N25A, DE275-501N16A, DE275X2-102N06A

Keywords - DE150-101N09A MOSFET specs

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