DE150-101N09A MOSFET: N-Ch, 100V, 9A. Full datasheet with pinout, specifications and replacement transistor list

DE150-101N09A Datasheet (PDF)

..1. Size:144K ixys
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DE150-101N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 100 V High dv/dt Nanosecond Switching ID25 = 9.0 A Ideal for Class C, D, & E Applications RDS(on) 0.16 Symbol Test Conditions Maximum Ratings PDC = 200 W TJ = 25 C to 150 C VDSS 100 V TJ = 25 C to 150 C; RGS = 1 M VDGR 100 V Continuous VGS 20 V Tran... See More ⇒

6.1. Size:160K ixys
de150-102n02a.pdf pdf_icon

DE150-102N02A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 1000 V High dv/dt Nanosecond Switching ID25 = 2 A Symbol Test Conditions Maximum Ratings RDS(on) = 7.8 TJ = 25 C to 150 C PDC = 200W VDSS 1000 V TJ = 25 C to 150 C; RGS = 1 M VDGR 1000 V Continuous VGS 20 V Transient VGSM 30 V Tc = 25 C ID25 2 A Tc = 25 C, pulse w... See More ⇒

8.1. Size:142K ixys
de150-501n04a.pdf pdf_icon

DE150-501N04A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 500 V High dv/dt Nanosecond Switching ID25 = 4.5 A RDS(on) 1.5 Symbol Test Conditions Maximum Ratings PDC = 200W TJ = 25 C to 150 C VDSS 500 V TJ = 25 C to 150 C; RGS = 1 M VDGR 500 V Continuous VGS 20 V Transient VGSM 30 V Tc = 25 C ID25 4.5 A... See More ⇒

8.2. Size:144K ixys
de150-201n09a.pdf pdf_icon

DE150-201N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 200 V High dv/dt Nanosecond Switching ID25 = 15 A Ideal for Class C, D, & E Applications RDS(on) 0.2 Symbol Test Conditions Maximum Ratings PDC = 200 W TJ = 25 C to 150 C VDSS 200 V TJ = 25 C to 150 C; RGS = 1 M VDGR 200 V Continuous VGS 20 V Transi... See More ⇒

Datasheet: CXDM3069N , CXDM4060N , CXDM4060P , CXDM6053N , CZDM1003N , D55NF06 , D84DM2 , D84DN2 , 20N50 , DE150-102N02A , DE150-201N09A , DE150-501N04A , DE275-101N30A , DE275-102N06A , DE275-201N25A , DE275-501N16A , DE275X2-102N06A .