All MOSFET. DE150-102N02A Datasheet

 

DE150-102N02A MOSFET. Datasheet pdf. Equivalent


   Type Designator: DE150-102N02A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 23 nC
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 7.8 Ohm
   Package: DE150

 DE150-102N02A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DE150-102N02A Datasheet (PDF)

 ..1. Size:160K  ixys
 de150-102n02a.pdf

DE150-102N02A DE150-102N02A

DE150-102N02A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 1000 V High dv/dt Nanosecond Switching ID25 = 2 A Symbol Test Conditions Maximum Ratings RDS(on) = 7.8 TJ = 25C to 150C PDC = 200W VDSS 1000 VTJ = 25C to 150C; RGS = 1 M VDGR 1000 V Continuous VGS 20 VTransient VGSM 30 VTc = 25C ID25 2 ATc = 25C, pulse w

 6.1. Size:144K  ixys
 de150-101n09a.pdf

DE150-102N02A DE150-102N02A

DE150-101N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 100 V High dv/dt Nanosecond Switching ID25 = 9.0 A Ideal for Class C, D, & E Applications RDS(on) 0.16 Symbol Test Conditions Maximum Ratings PDC = 200 W TJ = 25C to 150C VDSS 100 V TJ = 25C to 150C; RGS = 1 M VDGR 100 V Continuous VGS 20 V Tran

 8.1. Size:142K  ixys
 de150-501n04a.pdf

DE150-102N02A DE150-102N02A

DE150-501N04A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 500 V High dv/dt Nanosecond Switching ID25 = 4.5 A RDS(on) 1.5 Symbol Test Conditions Maximum Ratings PDC = 200W TJ = 25C to 150C VDSS 500 V TJ = 25C to 150C; RGS = 1 M VDGR 500 V Continuous VGS 20 V Transient VGSM 30 V Tc = 25C ID25 4.5 A

 8.2. Size:144K  ixys
 de150-201n09a.pdf

DE150-102N02A DE150-102N02A

DE150-201N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 200 V High dv/dt Nanosecond Switching ID25 = 15 A Ideal for Class C, D, & E Applications RDS(on) 0.2 Symbol Test Conditions Maximum Ratings PDC = 200 W TJ = 25C to 150C VDSS 200 V TJ = 25C to 150C; RGS = 1 M VDGR 200 V Continuous VGS 20 V Transi

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: STB80NF55-08-1

 

 
Back to Top