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DE150-501N04A Spec and Replacement


   Type Designator: DE150-501N04A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: DE150

 DE150-501N04A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DE150-501N04A Specs

 ..1. Size:142K  ixys
de150-501n04a.pdf pdf_icon

DE150-501N04A

DE150-501N04A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 500 V High dv/dt Nanosecond Switching ID25 = 4.5 A RDS(on) 1.5 Symbol Test Conditions Maximum Ratings PDC = 200W TJ = 25 C to 150 C VDSS 500 V TJ = 25 C to 150 C; RGS = 1 M VDGR 500 V Continuous VGS 20 V Transient VGSM 30 V Tc = 25 C ID25 4.5 A... See More ⇒

 8.1. Size:160K  ixys
de150-102n02a.pdf pdf_icon

DE150-501N04A

DE150-102N02A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 1000 V High dv/dt Nanosecond Switching ID25 = 2 A Symbol Test Conditions Maximum Ratings RDS(on) = 7.8 TJ = 25 C to 150 C PDC = 200W VDSS 1000 V TJ = 25 C to 150 C; RGS = 1 M VDGR 1000 V Continuous VGS 20 V Transient VGSM 30 V Tc = 25 C ID25 2 A Tc = 25 C, pulse w... See More ⇒

 8.2. Size:144K  ixys
de150-101n09a.pdf pdf_icon

DE150-501N04A

DE150-101N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 100 V High dv/dt Nanosecond Switching ID25 = 9.0 A Ideal for Class C, D, & E Applications RDS(on) 0.16 Symbol Test Conditions Maximum Ratings PDC = 200 W TJ = 25 C to 150 C VDSS 100 V TJ = 25 C to 150 C; RGS = 1 M VDGR 100 V Continuous VGS 20 V Tran... See More ⇒

 8.3. Size:144K  ixys
de150-201n09a.pdf pdf_icon

DE150-501N04A

DE150-201N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 200 V High dv/dt Nanosecond Switching ID25 = 15 A Ideal for Class C, D, & E Applications RDS(on) 0.2 Symbol Test Conditions Maximum Ratings PDC = 200 W TJ = 25 C to 150 C VDSS 200 V TJ = 25 C to 150 C; RGS = 1 M VDGR 200 V Continuous VGS 20 V Transi... See More ⇒

Detailed specifications: CXDM6053N , CZDM1003N , D55NF06 , D84DM2 , D84DN2 , DE150-101N09A , DE150-102N02A , DE150-201N09A , STF13NM60N , DE275-101N30A , DE275-102N06A , DE275-201N25A , DE275-501N16A , DE275X2-102N06A , DE275X2-501N16A , DE375-102N10A , DE375-102N12A .

Keywords - DE150-501N04A MOSFET specs

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