DE275-101N30A Datasheet. Specs and Replacement

Type Designator: DE275-101N30A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 550 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 700 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: DE275

DE275-101N30A substitution

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DE275-101N30A datasheet

 ..1. Size:143K  ixys
 de275-101n30a.pdf pdf_icon

DE275-101N30A

DE275-101N30A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 100 V High dv/dt ID25 = 30.0 A Nanosecond Switching RDS(on) Symbol Test Conditions Maximum Ratings 0.06 TJ = 25 C to 150 C VDSS 100 V PDC = 550 W TJ = 25 C to 150 C; RGS = 1 M VDGR 100 V Continuous VGS 20 V Transient VGSM 30 V Tc = 25 C ID25 30... See More ⇒

 6.1. Size:167K  ixys
 de275-102n06a.pdf pdf_icon

DE275-101N30A

DE275-102N06A RF Power MOSFET N-Channel Enhancement Mode VDSS = 1000 V Low Qg and Rg High dv/dt ID25 = 8 A Nanosecond Switching RDS(on) = 1.5 Ideal for Class C, D, & E Applications PDC = 590 W Symbol Test Conditions Maximum Ratings TJ = 25 C to 150 C VDSS 1000 V TJ = 25 C to 150 C; RGS = 1 M VDGR 1000 V Continuous VGS 20 V Transi... See More ⇒

 8.1. Size:137K  ixys
 de275-201n25a.pdf pdf_icon

DE275-101N30A

DE275-201N25A RF Power MOSFET N-Channel Enhancement Mode VDSS = 200 V Low Qg and Rg High dv/dt ID25 = 25 A Nanosecond Switching RDS(on) = 0.13 Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings PDC = 590 W TJ = 25 C to 150 C VDSS 200 V TJ = 25 C to 150 C; RGS = 1 M VDGR 200 V Continuous VGS 20 V Transie... See More ⇒

 8.2. Size:146K  ixys
 de275-501n16a.pdf pdf_icon

DE275-101N30A

DE275-501N16A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 500 V High dv/dt Nanosecond Switching ID25 = 16 A Ideal for Class C, D, & E Applications RDS(on) = 0.4 Symbol Test Conditions Maximum Ratings PDC = 590 W TJ = 25 C to 150 C VDSS 500 V TJ = 25 C to 150 C; RGS = 1 M VDGR 500 V Continuous VGS 20 V Transien... See More ⇒

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Detailed specifications: CZDM1003N, D55NF06, D84DM2, D84DN2, DE150-101N09A, DE150-102N02A, DE150-201N09A, DE150-501N04A, IRFZ24N, DE275-102N06A, DE275-201N25A, DE275-501N16A, DE275X2-102N06A, DE275X2-501N16A, DE375-102N10A, DE375-102N12A, DE375-501N21A

Keywords - DE275-101N30A MOSFET specs

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