DE275-101N30A MOSFET: N-Ch, 100V, 30A. Full specification with pinout and replacement list

DE275-101N30A Specs

..1. Size:143K ixys
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DE275-101N30A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 100 V High dv/dt ID25 = 30.0 A Nanosecond Switching RDS(on) Symbol Test Conditions Maximum Ratings 0.06 TJ = 25 C to 150 C VDSS 100 V PDC = 550 W TJ = 25 C to 150 C; RGS = 1 M VDGR 100 V Continuous VGS 20 V Transient VGSM 30 V Tc = 25 C ID25 30... See More ⇒

6.1. Size:167K ixys
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DE275-102N06A RF Power MOSFET N-Channel Enhancement Mode VDSS = 1000 V Low Qg and Rg High dv/dt ID25 = 8 A Nanosecond Switching RDS(on) = 1.5 Ideal for Class C, D, & E Applications PDC = 590 W Symbol Test Conditions Maximum Ratings TJ = 25 C to 150 C VDSS 1000 V TJ = 25 C to 150 C; RGS = 1 M VDGR 1000 V Continuous VGS 20 V Transi... See More ⇒

8.1. Size:137K ixys
de275-201n25a.pdf pdf_icon

DE275-201N25A RF Power MOSFET N-Channel Enhancement Mode VDSS = 200 V Low Qg and Rg High dv/dt ID25 = 25 A Nanosecond Switching RDS(on) = 0.13 Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings PDC = 590 W TJ = 25 C to 150 C VDSS 200 V TJ = 25 C to 150 C; RGS = 1 M VDGR 200 V Continuous VGS 20 V Transie... See More ⇒

8.2. Size:146K ixys
de275-501n16a.pdf pdf_icon

DE275-501N16A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 500 V High dv/dt Nanosecond Switching ID25 = 16 A Ideal for Class C, D, & E Applications RDS(on) = 0.4 Symbol Test Conditions Maximum Ratings PDC = 590 W TJ = 25 C to 150 C VDSS 500 V TJ = 25 C to 150 C; RGS = 1 M VDGR 500 V Continuous VGS 20 V Transien... See More ⇒

Detailed specifications: CZDM1003N , D55NF06 , D84DM2 , D84DN2 , DE150-101N09A , DE150-102N02A , DE150-201N09A , DE150-501N04A , IRFZ24N , DE275-102N06A , DE275-201N25A , DE275-501N16A , DE275X2-102N06A , DE275X2-501N16A , DE375-102N10A , DE375-102N12A , DE375-501N21A .