All MOSFET. DE375-102N12A Datasheet

 

DE375-102N12A Datasheet and Replacement


   Type Designator: DE375-102N12A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 940 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.5 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 77 nC
   Cossⓘ - Output Capacitance: 110 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.05 Ohm
   Package: DE375
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DE375-102N12A Datasheet (PDF)

 ..1. Size:145K  ixys
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DE375-102N12A

DE375-102N12A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt VDSS = 1000 V Nanosecond Switching ID25 = 12 A 50MHz Maximum Frequency RDS(on) 1.05 Symbol Test Conditions Maximum Ratings TJ = 25C to 150C PDC = 940 W VDSS 1000 V TJ = 25C to 150C; RGS = 1 M VDGR 1000 V Continuous VGS 20 V Transient VGSM

 3.1. Size:141K  ixys
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DE375-102N12A

DE375-102N10A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 1000 V High dv/dt Nanosecond Switching ID25 = 10 A Ideal for Class C, D, & E Applications RDS(on) 1.2 Symbol Test Conditions Maximum Ratings PDC = 940 W TJ = 25C to 150C VDSS 1000 V TJ = 25C to 150C; RGS = 1 M VDGR 1000 V Continuous VGS 20 V Tra

 8.1. Size:141K  ixys
de375-501n21a.pdf pdf_icon

DE375-102N12A

DE375-501N21A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 500 V High dv/dt Nanosecond Switching ID25 = 25 A 50MHz Maximum Frequency RDS(on) = 0.35 Symbol Test Conditions Maximum Ratings PDC = 940 W TJ = 25C to 150C VDSS 500 V TJ = 25C to 150C; RGS = 1 M VDGR 500 V Continuous VGS 20 V Tr

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