DE375-102N12A Spec and Replacement
Type Designator: DE375-102N12A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 940 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.05 Ohm
Package: DE375
DE375-102N12A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DE375-102N12A Specs
de375-102n12a.pdf
DE375-102N12A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt VDSS = 1000 V Nanosecond Switching ID25 = 12 A 50MHz Maximum Frequency RDS(on) 1.05 Symbol Test Conditions Maximum Ratings TJ = 25 C to 150 C PDC = 940 W VDSS 1000 V TJ = 25 C to 150 C; RGS = 1 M VDGR 1000 V Continuous VGS 20 V Transient VGSM ... See More ⇒
de375-102n10a.pdf
DE375-102N10A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 1000 V High dv/dt Nanosecond Switching ID25 = 10 A Ideal for Class C, D, & E Applications RDS(on) 1.2 Symbol Test Conditions Maximum Ratings PDC = 940 W TJ = 25 C to 150 C VDSS 1000 V TJ = 25 C to 150 C; RGS = 1 M VDGR 1000 V Continuous VGS 20 V Tra... See More ⇒
de375-501n21a.pdf
DE375-501N21A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 500 V High dv/dt Nanosecond Switching ID25 = 25 A 50MHz Maximum Frequency RDS(on) = 0.35 Symbol Test Conditions Maximum Ratings PDC = 940 W TJ = 25 C to 150 C VDSS 500 V TJ = 25 C to 150 C; RGS = 1 M VDGR 500 V Continuous VGS 20 V Tr... See More ⇒
Detailed specifications: DE150-501N04A , DE275-101N30A , DE275-102N06A , DE275-201N25A , DE275-501N16A , DE275X2-102N06A , DE275X2-501N16A , DE375-102N10A , STP65NF06 , DE375-501N21A , DE475-102N20A , DE475-102N21A , DE475-501N44A , DI9400T , DI9405 , DI9430T , DI9435T .
Keywords - DE375-102N12A MOSFET specs
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