DE475-102N21A
MOSFET. Datasheet pdf. Equivalent
Type Designator: DE475-102N21A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1800
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.5
V
|Id|ⓘ - Maximum Drain Current: 24
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 155
nC
Cossⓘ -
Output Capacitance: 190
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.45
Ohm
Package: DE475
DE475-102N21A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DE475-102N21A
Datasheet (PDF)
..1. Size:141K ixys
de475-102n21a.pdf
DE475-102N21A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt VDSS = 1000 V Nanosecond Switching ID25 = 24 A 30MHz Maximum Frequency RDS(on) Symbol Test Conditions Maximum Ratings 0.45 TJ = 25C to 150C VDSS 1000 V PDC = 1800W TJ = 25C to 150C; RGS = 1 M VDGR 1000 V Continuous VGS 20 V T
3.1. Size:141K ixys
de475-102n20a.pdf
DE475-102N20A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 1000 V High dv/dt ID25 = 20 A Nanosecond Switching RDS(on) 0.6 Symbol Test Conditions Maximum Ratings PDC = 1800W TJ = 25C to 150C VDSS 1000 V TJ = 25C to 150C; RGS = 1 M VDGR 1000 V Continuous VGS 20 V Transient VGSM 30 V Tc = 25C ID25
8.1. Size:140K ixys
de475-501n44a.pdf
DE475-501N44A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 500 V High dv/dt Nanosecond Switching ID25 = 48 A 30MHz Maximum Frequency RDS(on) 0.13 Symbol Test Conditions Maximum Ratings PDC = 1800W TJ = 25C to 150C VDSS 500 V TJ = 25C to 150C; RGS = 1 M VDGR 500 V Continuous VGS 20 V
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