DKI03062
MOSFET. Datasheet pdf. Equivalent
Type Designator: DKI03062
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 37
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 48
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 20.6
nC
trⓘ - Rise Time: 4.5
nS
Cossⓘ -
Output Capacitance: 380
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065
Ohm
Package:
TO-252
DKI03062
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DKI03062
Datasheet (PDF)
..1. Size:369K sanken-ele
dki03062.pdf 
30 V, 48 A, 5.2 m Low RDS(ON) N ch Trench Power MOSFET DKI03062 Features Package TO-252 V(BR)DSS --------------------------------- 30 V (ID = 100 A) (4) ID ---------------------------------------------------------- 48 A D RDS(ON) ------------ 6.5 m max. (VGS = 10 V, ID = 31 A) Qg ------- 9.3 nC (VGS = 4.5 V, VDS = 15 V, ID = 39.5 A) Low Total Gat
..2. Size:266K inchange semiconductor
dki03062.pdf
isc N-Channel MOSFET Transistor DKI03062FEATURESDrain Current I =48A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
8.1. Size:369K sanken-ele
dki03038.pdf
30 V, 48 A, 3.4 m Low RDS(ON) N ch Trench Power MOSFET DKI03038 Features Package TO-252 V(BR)DSS --------------------------------- 30 V (ID = 100 A) (4) ID ---------------------------------------------------------- 48 A D RDS(ON) ---------- 4.2 m max. (VGS = 10 V, ID = 47.2 A) Qg -------- 16.5 nC (VGS = 4.5 V, VDS = 15 V, ID = 57 A) Low Total Gat
8.2. Size:369K sanken-ele
dki03082.pdf
30 V, 29 A, 7.1 m Low RDS(ON) N ch Trench Power MOSFET DKI03082 Features Package TO-252 V(BR)DSS --------------------------------- 30 V (ID = 100 A) (4) ID ---------------------------------------------------------- 29 A D RDS(ON) ------------ 8.8 m max. (VGS = 10 V, ID = 25 A) Qg ------- 7.1 nC (VGS = 4.5 V, VDS = 15 V, ID = 31.5 A) Low Total Gat
8.3. Size:266K inchange semiconductor
dki03038.pdf
isc N-Channel MOSFET Transistor DKI03038FEATURESDrain Current I =48A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 4.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
8.4. Size:265K inchange semiconductor
dki03082.pdf
isc N-Channel MOSFET Transistor DKI03082FEATURESDrain Current I =29A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 8.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
Datasheet: IRFP360LC
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