DKI03082 MOSFET. Datasheet pdf. Equivalent
Type Designator: DKI03082
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 32 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 29 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 16 nC
trⓘ - Rise Time: 3.5 nS
Cossⓘ - Output Capacitance: 265 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm
Package: TO-252
DKI03082 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DKI03082 Datasheet (PDF)
dki03082.pdf
30 V, 29 A, 7.1 m Low RDS(ON) N ch Trench Power MOSFET DKI03082 Features Package TO-252 V(BR)DSS --------------------------------- 30 V (ID = 100 A) (4) ID ---------------------------------------------------------- 29 A D RDS(ON) ------------ 8.8 m max. (VGS = 10 V, ID = 25 A) Qg ------- 7.1 nC (VGS = 4.5 V, VDS = 15 V, ID = 31.5 A) Low Total Gat
dki03082.pdf
isc N-Channel MOSFET Transistor DKI03082FEATURESDrain Current I =29A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 8.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
dki03038.pdf
30 V, 48 A, 3.4 m Low RDS(ON) N ch Trench Power MOSFET DKI03038 Features Package TO-252 V(BR)DSS --------------------------------- 30 V (ID = 100 A) (4) ID ---------------------------------------------------------- 48 A D RDS(ON) ---------- 4.2 m max. (VGS = 10 V, ID = 47.2 A) Qg -------- 16.5 nC (VGS = 4.5 V, VDS = 15 V, ID = 57 A) Low Total Gat
dki03062.pdf
30 V, 48 A, 5.2 m Low RDS(ON) N ch Trench Power MOSFET DKI03062 Features Package TO-252 V(BR)DSS --------------------------------- 30 V (ID = 100 A) (4) ID ---------------------------------------------------------- 48 A D RDS(ON) ------------ 6.5 m max. (VGS = 10 V, ID = 31 A) Qg ------- 9.3 nC (VGS = 4.5 V, VDS = 15 V, ID = 39.5 A) Low Total Gat
dki03038.pdf
isc N-Channel MOSFET Transistor DKI03038FEATURESDrain Current I =48A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 4.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
dki03062.pdf
isc N-Channel MOSFET Transistor DKI03062FEATURESDrain Current I =48A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: PH3855L
History: PH3855L
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