2SK1495 MOSFET. Datasheet pdf. Equivalent

   Type Designator: 2SK1495
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 36 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 340 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO220

2SK1495 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SK1495 Datasheet (PDF)

0.1. Size:453K nec
2sk1495-z 2sk1496-z.pdf

8.1. Size:581K renesas
2sk1493-z 2sk1494-z.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.2. Size:390K nec
2sk1491.pdf