DMC25D1UVT MOSFET Datasheet: NP-Ch, 12V, 3.9A. Full specification with pinout and replacement list

DMC25D1UVT Specs and Replacement

   Type Designator: DMC25D1UVT
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 3.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 2.7 nS
   Cossⓘ - Output Capacitance: 393 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: TSOT26

DMC25D1UVT substitution

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DMC25D1UVT datasheet

..1. Size:576K diodes
dmc25d1uvt.pdf pdf_icon

DMC25D1UVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Device V(BR)DSS RDS(ON) TA = +25 Low Input Capacitance C Fast Switching Speed Q1 25V 4 @ VGS = 4.5V 0.5A Low Input/Output Leakage 55m @ VGS= -4.5V -3.9A Q2 -12V ESD Protected Gate 70m @ VGS= -2.5V -3.5A Totally Lead-Free & F... See More ⇒

8.1. Size:392K diodes
dmc25d0uvt.pdf pdf_icon

DMC25D0UVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-Resistance Device V(BR)DSS RDS(ON) TA = +25 C Low Input Capacitance Q1 25V 4 @ VGS = 4.5V 0.4 A Fast Switching Speed 80m @ VGS= -12V -3.2 A Low Input/Output Leakage Q2 -30V ESD Protected Gate on N-Channel (>6kV Human Body Model) 125m @ VGS= -... See More ⇒

9.1. Size:292K fairchild semi
fdmc2514sdc.pdf pdf_icon

October 2010 FDMC2514SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 40 A, 3.5 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 3.5 m at VGS = 10 V, ID = 22.5 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 4.7 m... See More ⇒

9.2. Size:319K fairchild semi
fdmc2512sdc.pdf pdf_icon

July 2010 FDMC2512SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 40 A, 2.0 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 2.0 m at VGS = 10 V, ID = 27 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 2.95 m a... See More ⇒