All MOSFET. DMC2700UDM Datasheet

 

DMC2700UDM Datasheet and Replacement


   Type Designator: DMC2700UDM
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 1.12 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
   |Id|ⓘ - Maximum Drain Current: 1.34 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 7.4 nS
   Cossⓘ - Output Capacitance: 9.68 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: SOT-26
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DMC2700UDM Datasheet (PDF)

 ..1. Size:144K  diodes
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DMC2700UDM

A Product Line ofDiodes IncorporatedDMC2700UDM20V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID max Low Gate Threshold Voltage VGS(th)

 0.1. Size:925K  cn vbsemi
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DMC2700UDM

DMC2700UDM-7www.VBsemi.twN- and P-Channel 2 V (D-S) MOSFET0 FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFETN-Channel 200.036 at VGS = 4.5 V 4.2 100 % Rg Tested0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/ECP-Channel - 200.083

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