DMG4N65CTI Datasheet. Specs and Replacement

Type Designator: DMG4N65CTI  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 9.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13.8 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: TO-220F

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DMG4N65CTI datasheet

 ..1. Size:321K  diodes
 dmg4n65cti.pdf pdf_icon

DMG4N65CTI

DMG4N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID V(BR)DSS RDS(ON) Package High BVDss rating for power application TC = 25 C Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 650V 3.0 @VGS = 10V ITO220-3 4.0 A Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC... See More ⇒

 ..2. Size:252K  inchange semiconductor
 dmg4n65cti.pdf pdf_icon

DMG4N65CTI

isc N-Channel MOSFET Transistor DMG4N65CTI FEATURES Drain Current I = 4A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 3.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒

 5.1. Size:273K  diodes
 dmg4n65ct.pdf pdf_icon

DMG4N65CTI

DMG4N65CT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID V(BR)DSS RDS(ON) Package High BVDss rating for power application TC = 25 C Low Input/Output Leakage 650V 3.0 @VGS = 10V TO220-3 4.0 A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q... See More ⇒

 5.2. Size:261K  inchange semiconductor
 dmg4n65ct.pdf pdf_icon

DMG4N65CTI

isc N-Channel MOSFET Transistor DMG4N65CT FEATURES Drain Current I = 4A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 3.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

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Detailed specifications: DMG3418L, DMG4406LSS, DMG4407SSS, DMG4511SK4, DMG4710SSS, DMG4812SSS, DMG4932LSD, DMG4N65CT, IRF530, DMG6301UDW, DMG6402LVT, DMG6601LVT, DMG6602SVTQ, DMG7401SFG, DMG7408SFG, DMG7410SFG, DMG7430LFG

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