All MOSFET. DMHC10H170SFJ Datasheet

 

DMHC10H170SFJ Datasheet and Replacement


   Type Designator: DMHC10H170SFJ
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11.1 nS
   Cossⓘ - Output Capacitance: 36 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: V-DFN5045-12
 

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DMHC10H170SFJ Datasheet (PDF)

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DMHC10H170SFJ

DMHC10H170SFJ 100V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary Features Low On-Resistance ID Device V(BR)DSS RDS(ON)MAX Low Input Capacitance TA = +25C Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 2.9A 160m @ VGS = 10V Q1 & Q4 100V Halogen and Antimony Free. Green Device (Note 3) 200m @ VGS = 4.5V 2.6A 250m

Datasheet: DMG7401SFG , DMG7408SFG , DMG7410SFG , DMG7430LFG , DMG7702SFG , DMG9N65CT , DMG9N65CTI , DMGD7N45SSD , STP80NF70 , DMHC3025LSD , DMHC4035LSD , DMJ7N70SK3 , DMN1019UFDE , DMN1019USN , DMN1019UVT , DMN1025UFDB , DMN1029UFDB .

History: SH8M14 | DMG8880LSS | C3M0065100K | CS65N20-30 | IXFV110N10P | IPB120N08S4-03 | SQM90142E

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