All MOSFET. DMN10H170SVT Datasheet

 

DMN10H170SVT MOSFET. Datasheet pdf. Equivalent


   Type Designator: DMN10H170SVT
   Marking Code: 11N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 2.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.9 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 36 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: TSOT26

 DMN10H170SVT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMN10H170SVT Datasheet (PDF)

 ..1. Size:487K  diodes
 dmn10h170svt.pdf

DMN10H170SVT DMN10H170SVT

DMN10H170SVT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low Gate Threshold Voltage V(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance 160m @ VGS = 10V 2.6A Fast Switching Speed 100V 200m @ VGS = 4.5V 2.3A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (

 4.1. Size:401K  diodes
 dmn10h170sfde.pdf

DMN10H170SVT DMN10H170SVT

DMN10H170SFDE 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.6mm Profile Ideal for Low Profile Applications ID max PCB Footprint of 4mm2 V(BR)DSS RDS(ON) max TA = +25C Low On-Resistance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 160m @ VGS = 10V 2.9A 100V Halogen and Antimony Free. Green Device

 4.2. Size:303K  diodes
 dmn10h170sfg.pdf

DMN10H170SVT DMN10H170SVT

DMN10H170SFGN-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID max 100% Unclamped Inductive Switch (UIS) test in production V(BR)DSS RDS(ON) max TA = +25C Low RDS(ON) ensures on state losses are minimized 122m @ VGS = 10V 2.9A Small form factor thermally efficient package enables higher 100V 133m @ VGS = 4.5V 2.7A density end

 4.3. Size:414K  diodes
 dmn10h170sk3.pdf

DMN10H170SVT DMN10H170SVT

DMN10H170SK3 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID V(BR)DSS RDS(on) max Low Input Capacitance TC = +25C 140m @ VGS = 10V 12A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 100V 11A 160m @ VGS = 4.5V Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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