DMN10H170SVT Datasheet. Specs and Replacement

Type Designator: DMN10H170SVT  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 36 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: TSOT26

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DMN10H170SVT substitution

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DMN10H170SVT datasheet

 ..1. Size:487K  diodes
 dmn10h170svt.pdf pdf_icon

DMN10H170SVT

DMN10H170SVT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low Gate Threshold Voltage V(BR)DSS RDS(ON) max TA = +25 C Low Input Capacitance 160m @ VGS = 10V 2.6A Fast Switching Speed 100V 200m @ VGS = 4.5V 2.3A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (... See More ⇒

 4.1. Size:401K  diodes
 dmn10h170sfde.pdf pdf_icon

DMN10H170SVT

DMN10H170SFDE 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.6mm Profile Ideal for Low Profile Applications ID max PCB Footprint of 4mm2 V(BR)DSS RDS(ON) max TA = +25 C Low On-Resistance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 160m @ VGS = 10V 2.9A 100V Halogen and Antimony Free. Green Device ... See More ⇒

 4.2. Size:303K  diodes
 dmn10h170sfg.pdf pdf_icon

DMN10H170SVT

DMN10H170SFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID max 100% Unclamped Inductive Switch (UIS) test in production V(BR)DSS RDS(ON) max TA = +25 C Low RDS(ON) ensures on state losses are minimized 122m @ VGS = 10V 2.9A Small form factor thermally efficient package enables higher 100V 133m @ VGS = 4.5V 2.7A density end ... See More ⇒

 4.3. Size:414K  diodes
 dmn10h170sk3.pdf pdf_icon

DMN10H170SVT

DMN10H170SK3 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID V(BR)DSS RDS(on) max Low Input Capacitance TC = +25 C 140m @ VGS = 10V 12A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 100V 11A 160m @ VGS = 4.5V Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards ... See More ⇒

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Detailed specifications: DMN10H099SFG, DMN10H099SK3, DMN10H100SK3, DMN10H120SE, DMN10H120SFG, DMN10H170SFDE, DMN10H170SFG, DMN10H170SK3, IRFZ48N, DMN10H220L, DMN10H220LE, DMN10H220LVT, DMN1150UFB, DMN1260UFA, DMN13H750S, DMN15H310SE, DMN2005UFG

Keywords - DMN10H170SVT MOSFET specs

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