All MOSFET. DMN2028UFDH Datasheet

 

DMN2028UFDH Datasheet and Replacement


   Type Designator: DMN2028UFDH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 77 nS
   Cossⓘ - Output Capacitance: 91 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: POWERDI3030-8
 

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DMN2028UFDH Datasheet (PDF)

 ..1. Size:275K  diodes
dmn2028ufdh.pdf pdf_icon

DMN2028UFDH

DMN2028UFDHDUAL N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25C ESD Protected Up To 2kV 20m @ VGS = 10V 6.8A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 22m @ VGS = 4.5V 6.5A Halogen and Antimony Free. Green Device (Note 3) 20V

 8.1. Size:153K  diodes
dmn2020lsn.pdf pdf_icon

DMN2028UFDH

DMN2020LSNN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SC-59 Low Input Capacitance Case Material - Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low

 8.2. Size:652K  diodes
dmn2027lk3.pdf pdf_icon

DMN2028UFDH

A Product Line ofDiodes IncorporatedDMN2027LK320V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Low gate drive 21m @ VGS= 10V 17.0A Green component and RoHS compliant (Note 1) 20V 27m @ VGS

 8.3. Size:308K  diodes
dmn2020ufcl.pdf pdf_icon

DMN2028UFDH

DMN2020UFCL20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Typical off board profile of 0.5mm - ideally suited for thin ID max V(BR)DSS RDS(ON) max TA = +25C applications Low RDS(ON) minimizes conduction losses 14 m @ VGS = 4.5V 9 A 20V PCB footprint of 2.56mm2 20 m @ VGS = 2.5V 7.5 A ESD Protected Gate Totall

Datasheet: DMN2014LHAB , DMN2015UFDE , DMN2016LFG , DMN2016LHAB , DMN2019UTS , DMN2020UFCL , DMN2022UFDF , DMN2023UCB4 , 20N60 , DMN2029USD , DMN2041UFDB , DMN2046U , DMN2050LFDB , DMN2065UW , DMN2075UDW , DMN2104L-7 , DMN2170U-7 .

History: AFN12N65T220FT | IXTT140N10P | SSF2341E | STD35NF3LLT4 | DH160P04D | TDM3466 | TPC8105-H

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