DMN2250UFB Datasheet and Replacement. Cross Reference Search

DMN2250UFB Datasheet (PDF)

..1. Size:235K diodes
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DMN2250UFBN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceID V(BR)DSS RDS(on) max Very Low Gate Threshold Voltage VGS(TH), 1.0V max TA = +25C Low Input Capacitance 0.17 @ VGS = 4.5V 1.35A Fast Switching Speed 20V 1.15A 0.23 @ VGS = 2.5V ESD Protected Gate 0.25 @ VGS = 1.8V 1.10A Totally Lead-Free & Fully RoH

9.1. Size:168K diodes
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DMN2215UDMDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Dual N-Channel MOSFET Case: SOT-26 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 100m @VGS = 4.5V, ID = 2.5A Moisture Sensitivi

9.2. Size:155K diodes
dmn2230u.pdf pdf_icon

DMN2230UN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-23 110 m @ VGS = 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 145 m @ VGS = 2.5V Moisture Sensitivity: Level 1 per J

9.3. Size:74K tysemi
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Product specificationDMN2230UN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT23 110 m @ VGS = 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 145 m @ VGS = 2.5V Moisture Sensitivity: Level 1 per J-STD-020 230 m @ VGS = 1.8V Terminal Connect

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