DMN2300UFD MOSFET. Datasheet pdf. Equivalent
Type Designator: DMN2300UFD
Marking Code: KS2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.95 V
|Id|ⓘ - Maximum Drain Current: 1.73 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 0.89 nC
trⓘ - Rise Time: 6.93 nS
Cossⓘ - Output Capacitance: 9.74 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: X1-DFN1212-3
DMN2300UFD Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMN2300UFD Datasheet (PDF)
dmn2300ufd.pdf
A Product Line ofDiodes IncorporatedDMN2300UFD20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Gate Threshold Voltage ID max Fast Switching Speed V(BR)DSS RDS(on) Max TA = 25C (Notes 4) Lead Free, RoHS Compliant (Note 1) 200m @ VGS = 4.5V 1.73A Halogen and Antimony Free. "Green" Device (Note 2) 260m @ VGS = 2.5V
dmn2300ufb4.pdf
A Product Line ofDiodes IncorporatedDMN2300UFB420V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Footprint of just 0.6mm2 thirteen times smaller than SOT23 ID V(BR)DSS RDS(ON) TA = +25C 0.4mm profile ideal for low profile applications (Note 5) Low Gate Threshold Voltage 175m @ VGS = 4.5V 1.30A Fast Switching Speed 240m @ VGS =
dmn2300ufl4.pdf
DMN2300UFL4 20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Footprint of Just 1.3 mm2 TA = +25C V(BR)DSS Max RDS(on) Ultra Low Profile Package - 0.4mm Profile (Note 6) On Resistance
dmn2300u.pdf
A Product Line ofDiodes IncorporatedDMN2300U 20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary Features and Benefits On resistance
dmn2300u.pdf
Product specification DMN2300U 20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary Features and Benefits On resistance
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