DMN2300UFL4 MOSFET. Datasheet pdf. Equivalent

   Type Designator: DMN2300UFL4
   Marking Code: 23N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.53 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.95 V
   |Id|ⓘ - Maximum Drain Current: 2.11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1.6 nC
   trⓘ - Rise Time: 2.8 nS
   Cossⓘ - Output Capacitance: 6.1 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.195 Ohm
   Package: X2-DFN1310-6

DMN2300UFL4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

DMN2300UFL4 Datasheet (PDF)

..1. Size:225K diodes
dmn2300ufl4.pdf

DMN2300UFL4 20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Footprint of Just 1.3 mm2 TA = +25C V(BR)DSS Max RDS(on) Ultra Low Profile Package - 0.4mm Profile (Note 6) On Resistance

5.1. Size:165K diodes
dmn2300ufb4.pdf

A Product Line ofDiodes IncorporatedDMN2300UFB420V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Footprint of just 0.6mm2 thirteen times smaller than SOT23 ID V(BR)DSS RDS(ON) TA = +25C 0.4mm profile ideal for low profile applications (Note 5) Low Gate Threshold Voltage 175m @ VGS = 4.5V 1.30A Fast Switching Speed 240m @ VGS =

5.2. Size:275K diodes
dmn2300ufd.pdf

A Product Line ofDiodes IncorporatedDMN2300UFD20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Gate Threshold Voltage ID max Fast Switching Speed V(BR)DSS RDS(on) Max TA = 25C (Notes 4) Lead Free, RoHS Compliant (Note 1) 200m @ VGS = 4.5V 1.73A Halogen and Antimony Free. "Green" Device (Note 2) 260m @ VGS = 2.5V

6.1. Size:151K diodes
dmn2300u.pdf