All MOSFET. SFI9620 Datasheet

 

SFI9620 Datasheet and Replacement


   Type Designator: SFI9620
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO262
 

 SFI9620 substitution

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SFI9620 Datasheet (PDF)

 ..1. Size:251K  fairchild semi
 sfi9620 sfw9620.pdf pdf_icon

SFI9620

SFW/I9620Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -3.5 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -200V2 Low RDS(ON) : 1.111 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximu

 8.1. Size:259K  fairchild semi
 sfi9624 sfw9624.pdf pdf_icon

SFI9620

SFW/I9624Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 2.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = -2.7 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -250V2 Low RDS(ON) : 1.65 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum

 9.1. Size:256K  fairchild semi
 sfi9630 sfw9630.pdf pdf_icon

SFI9620

SFW/I9630Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = -6.5 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -200V2 Low RDS(ON) : 0.581 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximu

 9.2. Size:263K  fairchild semi
 sfi9644 sfw9644.pdf pdf_icon

SFI9620

SFW/I9644Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = -8.6 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -250V2 Low RDS(ON) : 0.549 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximu

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History: FDP20N50F

Keywords - SFI9620 MOSFET datasheet

 SFI9620 cross reference
 SFI9620 equivalent finder
 SFI9620 lookup
 SFI9620 substitution
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