DMN24H3D5L
MOSFET. Datasheet pdf. Equivalent
Type Designator: DMN24H3D5L
Marking Code: 2H4
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.76
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 240
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 0.48
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 6.6
nC
trⓘ - Rise Time: 2
nS
Cossⓘ -
Output Capacitance: 11
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.5
Ohm
Package:
SOT-23
DMN24H3D5L
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMN24H3D5L
Datasheet (PDF)
..1. Size:280K diodes
dmn24h3d5l.pdf 
DMN24H3D5L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Gate Threshold Voltage ID V(BR)DSS RDS(ON) Low Input Capacitance TA = +25C 3.5 @ VGS = 10V 0.48A Fast Switching Speed 240V 0.48A 3.5 @ VGS = 4.5V Small Surface Mount Package 6.0 @ VGS = 3.3V 0.37A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
8.1. Size:380K diodes
dmn24h11ds.pdf
DMN24H11DS N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary Low Gate Threshold Voltage ID V(BR)DSS RDS(ON) Low Input Capacitance TA = +25C Fast Switching Speed 11 @ VGS = 10V 0.27A 240V Small Surface Mount Package 12 @ VGS = 4.5V 0.26A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony
9.1. Size:151K diodes
dmn2400uv.pdf
DMN2400UVDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT-563 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminals: Finish Ma
9.2. Size:374K diodes
dmn2400ufb.pdf
DMN2400UFB N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max TA = +25C Low Gate Threshold Voltage Low Input Capacitance 0.55 @ VGS = 4.5V 0.75A Fast Switching Speed 20V 0.75 @ VGS = 2.5V 0.63A Low Input/Output Leakage Ultra-Small Surface Mount Package ESD Protect
9.3. Size:456K diodes
dmn2400ufb4.pdf
DMN2400UFB4 20V N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: X2-DFN1006-3 Low Gate Threshold Voltage Case Material: Molded Plastic, "Green" Molding Compound; Low Input Capacitance UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage
9.4. Size:319K diodes
dmn2400ufd.pdf
DMN2400UFD N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(ON) Very low Gate Threshold Voltage, 1.0V Max TA = +25C Low Input Capacitance 0.9A 0.6 @ VGS = 4.5V Fast Switching Speed 0.7A 0.8 @ VGS = 2.5V 20V ESD Protected Gate 0.5A 1.0 @ VGS = 1.8V Totally Lead-Free & F
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