DMN2990UFA Datasheet and Replacement
Type Designator: DMN2990UFA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id|ⓘ - Maximum Drain Current: 0.51 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 3.3 nS
Cossⓘ - Output Capacitance: 4 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.99 Ohm
Package: X2-DFN0806-3
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DMN2990UFA Datasheet (PDF)
dmn2990ufa.pdf

DMN2990UFA20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Package Profile, 0.4mm Maximum Package height ID max V(BR)DSS RDS(ON) max TA = +25C 0.48mm2 package footprint, 16 times smaller than SOT23 Low On-Resistance0.99 @ VGS = 4.5V 510mA Very low Gate Threshold Voltage, 1.0V max 1.2 @ VGS = 2.5V 470mA 20V ESD Pr
dmn2990ufz.pdf

DMN2990UFZ20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Package Profile, 0.42mm Maximum Package Height ID max V(BR)DSS RDS(ON) max TA = +25C 0.62mm x 0.62mm Package Footprint Low On-Resistance0.99 @ VGS = 4.5V 250mA Very Low Gate Threshold Voltage, 1.0V Max 1.2 @ VGS = 2.5V 230mA 20V ESD Protected Gate1.8
dmn2990udj.pdf

DMN2990UDJ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Dual N-Channel MOSFET ID Max V(BR)DSS RDS(ON) Max Low On-Resistance TA = 25C Very Low Gate Threshold Voltage, 1.0V Max 0.99 @ VGS = 4.5V 450mA Low Input Capacitance 1.2 @ VGS = 2.5V 400mA Fast Switching Speed 20V 1.8 @ VGS = 1.8V 330mA Ultra-Small Surface
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: FDB86366-F085 | CED05N8 | BUZ84 | IRFHM792PBF | FDBL0210N80 | AON6794 | BL10N70-A
Keywords - DMN2990UFA MOSFET datasheet
DMN2990UFA cross reference
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History: FDB86366-F085 | CED05N8 | BUZ84 | IRFHM792PBF | FDBL0210N80 | AON6794 | BL10N70-A



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