DMN2990UFZ Datasheet and Replacement. Cross Reference Search

DMN2990UFZ Datasheet (PDF)

..1. Size:243K diodes
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DMN2990UFZ20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Package Profile, 0.42mm Maximum Package Height ID max V(BR)DSS RDS(ON) max TA = +25C 0.62mm x 0.62mm Package Footprint Low On-Resistance0.99 @ VGS = 4.5V 250mA Very Low Gate Threshold Voltage, 1.0V Max 1.2 @ VGS = 2.5V 230mA 20V ESD Protected Gate1.8

5.1. Size:138K diodes
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DMN2990UFA20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Package Profile, 0.4mm Maximum Package height ID max V(BR)DSS RDS(ON) max TA = +25C 0.48mm2 package footprint, 16 times smaller than SOT23 Low On-Resistance0.99 @ VGS = 4.5V 510mA Very low Gate Threshold Voltage, 1.0V max 1.2 @ VGS = 2.5V 470mA 20V ESD Pr

6.1. Size:397K diodes
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DMN2990UDJ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Dual N-Channel MOSFET ID Max V(BR)DSS RDS(ON) Max Low On-Resistance TA = 25C Very Low Gate Threshold Voltage, 1.0V Max 0.99 @ VGS = 4.5V 450mA Low Input Capacitance 1.2 @ VGS = 2.5V 400mA Fast Switching Speed 20V 1.8 @ VGS = 1.8V 330mA Ultra-Small Surface

Datasheet: DMN2400UFD , DMN24H11DS , DMN24H3D5L , DMN2500UFB4 , DMN2501UFB4 , DMN2550UFA , DMN25D0UFA , DMN2990UFA , 7N65 , DMN3008SFG , DMN3010LFG , DMN3010LK3 , DMN3015LSD , DMN3016LDN , DMN3016LFDE , DMN3016LK3 , DMN3016LPS .