All MOSFET. DMN3016LFDE Datasheet

 

DMN3016LFDE Datasheet and Replacement


   Type Designator: DMN3016LFDE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.73 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 16.5 nS
   Cossⓘ - Output Capacitance: 119 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: U-DFN2020-6
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DMN3016LFDE Datasheet (PDF)

 ..1. Size:266K  diodes
dmn3016lfde.pdf pdf_icon

DMN3016LFDE

DMN3016LFDEN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.6mm profile ideal for low profile applications ID max V(BR)DSS RDS(ON) max PCB footprint of 4mm2 TA = +25C Low Gate Threshold Voltage 12m @ VGS = 10V 10A Low On-Resistance 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 16m @ VGS = 4.5V 8.5A

 6.1. Size:394K  1
dmn3016lps-13.pdf pdf_icon

DMN3016LFDE

DMN3016LPS 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low On-Resistance ID Low Input Capacitance V(BR)DSS RDS(ON) max TA = +25C Fast Switching Speed 12m @ VGS = 10V 10.8A

 6.2. Size:347K  diodes
dmn3016lps.pdf pdf_icon

DMN3016LFDE

DMN3016LPS 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low On-Resistance ID Low Input Capacitance V(BR)DSS RDS(ON) max TA = +25C Fast Switching Speed 12m @ VGS = 10V 10.8A

 6.3. Size:462K  diodes
dmn3016lk3.pdf pdf_icon

DMN3016LFDE

DMN3016LK3 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switch (UIS) Test in Production ID V(BR)DSS RDS(on) Low On-Resistance TC = +25C Fast Switching Speed 12m @ VGS = 10V 37.8A Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2) 30V 16m @ VGS = 4.5V 32.8A Halogen and Antimony Free. Green D

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History: AOT1404L | AON6794 | BUZ84 | CED05N8 | IRFP360PBF | IRLR024 | BL10N70-A

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