All MOSFET. DMN3016LK3 Datasheet

 

DMN3016LK3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: DMN3016LK3
   Marking Code: N3016L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 12.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 25.1 nC
   trⓘ - Rise Time: 16.5 nS
   Cossⓘ - Output Capacitance: 119 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO-252

 DMN3016LK3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMN3016LK3 Datasheet (PDF)

 ..1. Size:462K  diodes
 dmn3016lk3.pdf

DMN3016LK3 DMN3016LK3

DMN3016LK3 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switch (UIS) Test in Production ID V(BR)DSS RDS(on) Low On-Resistance TC = +25C Fast Switching Speed 12m @ VGS = 10V 37.8A Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2) 30V 16m @ VGS = 4.5V 32.8A Halogen and Antimony Free. Green D

 ..2. Size:266K  inchange semiconductor
 dmn3016lk3.pdf

DMN3016LK3 DMN3016LK3

isc N-Channel MOSFET Transistor DMN3016LK3FEATURESDrain Current I = 37.8A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 12m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

 6.1. Size:394K  1
 dmn3016lps-13.pdf

DMN3016LK3 DMN3016LK3

DMN3016LPS 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low On-Resistance ID Low Input Capacitance V(BR)DSS RDS(ON) max TA = +25C Fast Switching Speed 12m @ VGS = 10V 10.8A

 6.2. Size:347K  diodes
 dmn3016lps.pdf

DMN3016LK3 DMN3016LK3

DMN3016LPS 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low On-Resistance ID Low Input Capacitance V(BR)DSS RDS(ON) max TA = +25C Fast Switching Speed 12m @ VGS = 10V 10.8A

 6.3. Size:266K  diodes
 dmn3016lfde.pdf

DMN3016LK3 DMN3016LK3

DMN3016LFDEN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.6mm profile ideal for low profile applications ID max V(BR)DSS RDS(ON) max PCB footprint of 4mm2 TA = +25C Low Gate Threshold Voltage 12m @ VGS = 10V 10A Low On-Resistance 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 16m @ VGS = 4.5V 8.5A

 6.4. Size:286K  diodes
 dmn3016lss.pdf

DMN3016LK3 DMN3016LK3

DMN3016LSS 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = 25C 12m @ VGS = 10V 10.3 A Fast Switching Speed 30V 9.3 A 16m @ VGS = 4.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3

 6.5. Size:366K  diodes
 dmn3016ldn.pdf

DMN3016LK3 DMN3016LK3

DMN3016LDN 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX Device V(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance 20m @ VGS = 10V 7.3A Fast Switching Speed N-Channel 30V 6.7A 24m @ VGS = 4.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Dev

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