DMN3050S-7 Datasheet and Replacement
Type Designator: DMN3050S-7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 55 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: SOT-23
DMN3050S-7 substitution
DMN3050S-7 Datasheet (PDF)
dmn3050s-7.pdf
DMN3050SN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance: Case: SOT-2335m @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 50m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020D Low Gate T
dmn3050s.pdf
DMN3050SN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance: Case: SOT-2335m @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 50m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020D Low Gate T
dmn3051l.pdf
DMN3051LN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance: Case: SOT-23 RDS(ON)
dmn3053l.pdf
DMN3053LN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-ResistanceV(BR)DSS RDS(ON) TA = +25C Low Gate Threshold Voltage Low Input Capacitance 45m @ VGS = 10V 4.0 A 30V Fast Switching Speed 50m @ VGS = 4.5V 3.5A Low Input/Output Leakage ESD Protected GateDescription Totally Lead-Free & Fully RoHS Co
Datasheet: DMN3025LSS , DMN3026LVT , DMN3029LFG , DMN3030LFG , DMN3032LE , DMN3033LSNQ , DMN3035LWN , DMN3042L , IRF530 , DMN3053L , DMN3065LW , DMN3067LW , DMN3070SSN , DMN30H14DLY , DMN30H4D0L , DMN30H4D0LFDE , DMN3135LVT .
Keywords - DMN3050S-7 MOSFET datasheet
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