DMN53D0L
MOSFET. Datasheet pdf. Equivalent
Type Designator: DMN53D0L
Marking Code: 53E
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.37
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 0.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 0.6
nC
trⓘ - Rise Time: 2.5
nS
Cossⓘ -
Output Capacitance: 5.3
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.6
Ohm
Package:
SOT-23
DMN53D0L
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMN53D0L
Datasheet (PDF)
..1. Size:328K diodes
dmn53d0l.pdf 
DMN53D0LN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits ID N-Channel MOSFETV(BR)DSS RDS(ON) TA = +25C Low On-Resistance Very Low Gate Threshold Voltage 1.6 @ VGS = 10V 500 mA 50V Low Input Capacitance 2.5 @ VGS = 4.5V 200 mA Fast Switching Speed Low Input/Output Leakage ESD Protected to 2KV
0.1. Size:237K diodes
dmn53d0lw.pdf
DMN53D0LWN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID N-Channel MOSFETV(BR)DSS RDS(ON) TA = +25C Low On-Resistance Low Input Capacitance 2.0 @ VGS = 10V 360mA 50V Fast Switching Speed 3.0 @ VGS = 5V 250mA ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free.
0.2. Size:248K diodes
dmn53d0lt.pdf
DMN53D0LTN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits N-Channel MOSFETID V(BR)DSS RDS(ON) TA = +25C Low On-Resistance Very Low Gate Threshold Voltage 1.6 @ VGS = 10V 350 mA 50V Low Input Capacitance 2.5 @ VGS = 4.5V 200 mA Fast Switching Speed Low Input/ Output Leakage Ultra-Small Surface
0.3. Size:256K diodes
dmn53d0lv.pdf
DMN53D0LVDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits Dual N-Channel MOSFETID V(BR)DSS RDS(ON) Low On-ResistanceTA = +25C Very Low Gate Threshold Voltage 1.6 @ VGS = 10V 350 mA 50V Low Input Capacitance 2.5 @ VGS = 4.5V 200 mA Fast Switching Speed Low Input/ Output Leakage Ultra-Sm
0.4. Size:430K diodes
dmn53d0lq.pdf
DMN53D0LQ N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits ID Low On-Resistance V(BR)DSS RDS(ON) TA = +25C Very Low Gate Threshold Voltage Low Input Capacitance 1.6 @ VGS = 10V 500 mA 50V Fast Switching Speed 2.5 @ VGS = 4.5V 200 mA Low Input/Output Leakage ESD Protected to 2KV Totally Lead-Fre
0.5. Size:258K diodes
dmn53d0ldw.pdf
DMN53D0LDWDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features Dual N-Channel MOSFETID V(BR)DSS RDS(ON) TA = +25C Low On-Resistance Low Input Capacitance 1.6 @ VGS = 10V 360mA 50V Fast Switching Speed 2.5 @ VGS = 4.5V 250mA Small Surface Mount Package ESD protected to 2KV Description Totally Lead-Free &
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