DMN53D0LDW MOSFET. Datasheet pdf. Equivalent
Type Designator: DMN53D0LDW
Marking Code: MM5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id|ⓘ - Maximum Drain Current: 0.36 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 0.6 nC
trⓘ - Rise Time: 2.5 nS
Cossⓘ - Output Capacitance: 5.3 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
Package: SOT-363
DMN53D0LDW Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMN53D0LDW Datasheet (PDF)
dmn53d0ldw.pdf
DMN53D0LDWDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features Dual N-Channel MOSFETID V(BR)DSS RDS(ON) TA = +25C Low On-Resistance Low Input Capacitance 1.6 @ VGS = 10V 360mA 50V Fast Switching Speed 2.5 @ VGS = 4.5V 250mA Small Surface Mount Package ESD protected to 2KV Description Totally Lead-Free &
dmn53d0lw.pdf
DMN53D0LWN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID N-Channel MOSFETV(BR)DSS RDS(ON) TA = +25C Low On-Resistance Low Input Capacitance 2.0 @ VGS = 10V 360mA 50V Fast Switching Speed 3.0 @ VGS = 5V 250mA ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free.
dmn53d0lt.pdf
DMN53D0LTN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits N-Channel MOSFETID V(BR)DSS RDS(ON) TA = +25C Low On-Resistance Very Low Gate Threshold Voltage 1.6 @ VGS = 10V 350 mA 50V Low Input Capacitance 2.5 @ VGS = 4.5V 200 mA Fast Switching Speed Low Input/ Output Leakage Ultra-Small Surface
dmn53d0l.pdf
DMN53D0LN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits ID N-Channel MOSFETV(BR)DSS RDS(ON) TA = +25C Low On-Resistance Very Low Gate Threshold Voltage 1.6 @ VGS = 10V 500 mA 50V Low Input Capacitance 2.5 @ VGS = 4.5V 200 mA Fast Switching Speed Low Input/Output Leakage ESD Protected to 2KV
dmn53d0lv.pdf
DMN53D0LVDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits Dual N-Channel MOSFETID V(BR)DSS RDS(ON) Low On-ResistanceTA = +25C Very Low Gate Threshold Voltage 1.6 @ VGS = 10V 350 mA 50V Low Input Capacitance 2.5 @ VGS = 4.5V 200 mA Fast Switching Speed Low Input/ Output Leakage Ultra-Sm
dmn53d0lq.pdf
DMN53D0LQ N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits ID Low On-Resistance V(BR)DSS RDS(ON) TA = +25C Very Low Gate Threshold Voltage Low Input Capacitance 1.6 @ VGS = 10V 500 mA 50V Fast Switching Speed 2.5 @ VGS = 4.5V 200 mA Low Input/Output Leakage ESD Protected to 2KV Totally Lead-Fre
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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