DMN53D0LT Specs and Replacement
Type Designator: DMN53D0LT
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.5 nS
Cossⓘ - Output Capacitance: 5.3 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
Package: SOT-523
DMN53D0LT substitution
- MOSFET ⓘ Cross-Reference Search
DMN53D0LT datasheet
dmn53d0lt.pdf
DMN53D0LT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits N-Channel MOSFET ID V(BR)DSS RDS(ON) TA = +25 C Low On-Resistance Very Low Gate Threshold Voltage 1.6 @ VGS = 10V 350 mA 50V Low Input Capacitance 2.5 @ VGS = 4.5V 200 mA Fast Switching Speed Low Input/ Output Leakage Ultra-Small Surface ... See More ⇒
dmn53d0lw.pdf
DMN53D0LW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID N-Channel MOSFET V(BR)DSS RDS(ON) TA = +25 C Low On-Resistance Low Input Capacitance 2.0 @ VGS = 10V 360mA 50V Fast Switching Speed 3.0 @ VGS = 5V 250mA ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. ... See More ⇒
dmn53d0lv.pdf
DMN53D0LV DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits Dual N-Channel MOSFET ID V(BR)DSS RDS(ON) Low On-Resistance TA = +25 C Very Low Gate Threshold Voltage 1.6 @ VGS = 10V 350 mA 50V Low Input Capacitance 2.5 @ VGS = 4.5V 200 mA Fast Switching Speed Low Input/ Output Leakage Ultra-Sm... See More ⇒
Detailed specifications: DMN4010LFG, DMN4010LK3, DMN4020LFDE, DMN4026SK3, DMN4026SSD, DMN4060SVT-7, DMN53D0L, DMN53D0LDW, AO3400A, DMN53D0LV, DMN53D0LW, DMN53D0U, DMN5L06-7, DMN5L06DMKQ, DMN5L06T-7, DMN5L06W-7, DMN6013LFG
Keywords - DMN53D0LT MOSFET specs
DMN53D0LT cross reference
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