All MOSFET. DMN6075S Datasheet

 

DMN6075S MOSFET. Datasheet pdf. Equivalent


   Type Designator: DMN6075S
   Marking Code: S67
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12.3 nC
   trⓘ - Rise Time: 4.1 nS
   Cossⓘ - Output Capacitance: 32.6 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: SOT-23

 DMN6075S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMN6075S Datasheet (PDF)

 ..1. Size:517K  diodes
 dmn6075s.pdf

DMN6075S DMN6075S

DMN6075S 60V N-CHANNEL ENHANCEMENT MODE MOSFET Summary Features and Benefits ID max N MOSFET V(BR)DSS RDS(ON) max TA = +25C Low On-Resistance Low Input Capacitance 85 m @ VGS = 10V 2.5A 60V Fast Switching Speed 120 m @ VGS = 4.5V 2.0A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note

 8.1. Size:230K  diodes
 dmn6070ssd.pdf

DMN6075S DMN6075S

DMN6070SSD60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID max V(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance Fast Switching Speed 80m @ VGS = 10V 4.1A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 60V 100m @ VGS = 4.5V 3.6A Halogen and Antimony Free. Green Device (Note 3

 8.2. Size:278K  diodes
 dmn6070sfcl.pdf

DMN6075S DMN6075S

DMN6070SFCL60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Typical off board profile of 0.5mm - ideally suited for thin ID max V(BR)DSS RDS(ON) max TA = +25C applications Low RDS(ON) minimizes conduction losses 85 m @ VGS = 10V 3.0A 60V PCB footprint of 2.56mm2 120 m @ VGS = 4V 2.5A Totally Lead-Free & Fully RoHS C

 8.3. Size:495K  diodes
 dmn6070sy.pdf

DMN6075S DMN6075S

DMN6070SY N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Gate Threshold Voltage BVDSS RDS(ON) TA = +25 Low Input Capacitance C Fast Switching Speed 85m @ VGS = 10V 4.1A 60V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 110m @ VGS = 4.5V 3.6A Halogen and Antimony Free. Green Device (Note 3) Description Me

 8.4. Size:1549K  cn vbsemi
 dmn6070ssd.pdf

DMN6075S DMN6075S

DMN6070SSDwww.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Chann

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AON6144

 

 
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