2SK1497 Datasheet and Replacement
Type Designator: 2SK1497
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 115 nS
Cossⓘ - Output Capacitance: 700 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: TO3P
2SK1497 substitution
2SK1497 Datasheet (PDF)
2sk1493-z 2sk1494-z.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Datasheet: 2SK1484 , 2SK1485 , 2SK1491 , 2SK1492 , 2SK1493 , 2SK1494 , 2SK1495 , 2SK1496 , IRFZ46N , 2SK1498 , 2SK1499 , 2SK1500 , 2SK1501 , 2SK1502 , 2SK1549-R , 2SK1553-01MR , 2SK1580 .
Keywords - 2SK1497 MOSFET datasheet
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History: FDS6680A | BFC41
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