DMP2006UFG Specs and Replacement
Type Designator: DMP2006UFG
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 17.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 728 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: POWERDI3333-8
DMP2006UFG substitution
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DMP2006UFG datasheet
dmp2006ufg.pdf
DMP2006UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID max Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) max TC = +25 C Small form factor, thermally efficient package enables higher density end products 5.5m @ VGS = -4.5V -40A -20V Occupies just 33% of the board area occupied by SO-8 enabling 7.5m ... See More ⇒
dmp2003ups.pdf
DMP2003UPS Green 20V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features ID Thermally Efficient Package-Cooler Running Applications BVDSS RDS(ON) TC = +25 C High Conversion Efficiency Low RDS(ON) Minimizes On State Losses 2.2m @ VGS = -10V -150A ... See More ⇒
dmp2002ups.pdf
DMP2002UPS Green 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package-Cooler Running Applications V(BR)DSS RDS(ON) TC = +25 C High Conversion Efficiency Low RDS(ON) Minimizes On State Losses 1.9m @ VGS = -10V -60A ... See More ⇒
Detailed specifications: DMP1055UFDB, DMP1080UCB4, DMP1096UCB4, DMP10H400SK3, DMP1200UFR4, DMP1245UFCL, DMP1555UFA, DMP2002UPS, 8205A, DMP2007UFG, DMP2008UFG, DMP2018LFK, DMP2021UFDF, DMP2023UFDF, DMP2033UCB9, DMP2033UVT, DMP2035UVT
Keywords - DMP2006UFG MOSFET specs
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