DMP2008UFG
MOSFET. Datasheet pdf. Equivalent
Type Designator: DMP2008UFG
Marking Code: S36
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 14
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 72
nC
trⓘ - Rise Time: 33
nS
Cossⓘ -
Output Capacitance: 635
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008
Ohm
Package:
POWERDI3333-8
DMP2008UFG
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMP2008UFG
Datasheet (PDF)
..1. Size:250K diodes
dmp2008ufg.pdf 
DMP2008UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID max Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) max TA = +25C Small form factor thermally efficient package enables higher density end products 8m @ VGS = -4.5V -14A Occupies just 33% of the board area occupied by SO-8 enabling 9.8m @ VGS = -2.
8.1. Size:365K 1
dmp2002ups-13.pdf
DMP2002UPS Green20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package-Cooler Running Applications BVDSS RDS(ON) TC = +25C High Conversion Efficiency Low RDS(ON) Minimizes On State Losses 1.9m @ VGS = -10V -60A
8.2. Size:598K diodes
dmp2003ups.pdf
DMP2003UPS Green20V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features ID Thermally Efficient Package-Cooler Running Applications BVDSS RDS(ON) TC = +25C High Conversion Efficiency Low RDS(ON) Minimizes On State Losses 2.2m @ VGS = -10V -150A
8.3. Size:592K diodes
dmp2002ups.pdf
DMP2002UPS Green20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package-Cooler Running Applications V(BR)DSS RDS(ON) TC = +25C High Conversion Efficiency Low RDS(ON) Minimizes On State Losses 1.9m @ VGS = -10V -60A
8.4. Size:398K diodes
dmp2006ufg.pdf
DMP2006UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID max Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) max TC = +25C Small form factor, thermally efficient package enables higher density end products 5.5m @ VGS = -4.5V -40A -20V Occupies just 33% of the board area occupied by SO-8 enabling 7.5m
8.5. Size:217K diodes
dmp2004wk.pdf
DMP2004WKP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-323 Very Low Gate Threshold Voltage VGS(th)
8.6. Size:137K diodes
dmp2004tk.pdf
DMP2004TKP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-523 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level
8.7. Size:148K diodes
dmp2004dwk.pdf
DMP2004DWKDUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual P-Channel MOSFET Case: SOT-363 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage VGS(TH)
8.8. Size:142K diodes
dmp2004vk.pdf
DMP2004VKDUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual P-Channel MOSFET Case: SOT-563 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage VGS(TH)
8.9. Size:217K diodes
dmp2004dmk.pdf
DMP2004DMKDUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual P-Channel MOSFET Case: SOT-26 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage VGS(th)
8.10. Size:142K diodes
dmp2004k.pdf
DMP2004KP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOT-23 Very Low Gate Threshold Voltage VGS(TH)
8.11. Size:239K diodes
dmp2007ufg.pdf
DMP2007UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID max Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) max TC = +25 Small form factor thermally efficient package enables higher C density end products 5.5m @ VGS = -10V -40A Occupies just 33% of the board area occupied by SO-8 enabling -20V 7.0m
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