All MOSFET. DMP2100U Datasheet

 

DMP2100U MOSFET. Datasheet pdf. Equivalent


   Type Designator: DMP2100U
   Marking Code: 35P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 4.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.1 nC
   trⓘ - Rise Time: 155 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: SOT-23

 DMP2100U Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMP2100U Datasheet (PDF)

 ..1. Size:193K  diodes
 dmp2100u.pdf

DMP2100U DMP2100U

DMP2100UP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-ResistanceV(BR)DSS RDS(ON) MAX Package TA = +25C Low Input Capacitance 38m @ VGS = -10V -4.3A Fast Switching Speed -20V 43m @ VGS = -4.5V SOT23 -4.0A Low Input/Output Leakage 75m @ VGS = -2.5V -2.8A ESD Protected Up To 3kV Totally Lead-Free & Fully RoHS Compl

 0.1. Size:422K  diodes
 dmp2100ucb9.pdf

DMP2100U DMP2100U

DMP2100UCB9 DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA = +25C) Features and Benefits LD-MOS Technology with the Lowest Figure of Merit: VDSS RDS(on) Qg Qgd ID RDS(on) = 80m to Minimize On-State Losses -20V 80m 3.3nC 0.6nC -4A Qg = 3.3nC for Ultra-Fast Switching Vgs(th) = -0.7V typ. for a Low Turn-On Potential CSP with Footpr

 8.1. Size:400K  diodes
 dmp210dufb4.pdf

DMP2100U DMP2100U

DMP210DUFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID P-Channel MOSFET V(BR)DSS RDS(ON) TA = +25C Low On-Resistance 5 @ VGS = -4.5V -200mA Very Low Gate Threshold Voltage VGS(TH) -170mA 7 @ VGS = -2.5V Low Input Capacitance -20V 10 @ VGS = -1.8V -140mA Fast Switching Speed -50mA 15 @ VGS = -1.5V

 8.2. Size:440K  diodes
 dmp210dudj.pdf

DMP2100U DMP2100U

DMP210DUDJDUAL P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Dual P-Channel MOSFET Case: SOT-963 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound.UL Flammability Classification Rating 94V-0 o 5.0 @ -4.5V o 7.0 @ -2.5V Moisture Sensitivity: Level 1 per J-STD-020 o 10 @ -1.8V Terminal Connections: See Diagra

 8.3. Size:178K  diodes
 dmp2104v.pdf

DMP2100U DMP2100U

DMP2104VP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data P-Channel MOSFET Case: SOT-563 Very Low On-Resistance Case Material: Molded Plastic, Green Molding Compound.UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitance Terminal

 8.4. Size:317K  diodes
 dmp2104lp.pdf

DMP2100U DMP2100U

DMP2104LPP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data P-Channel MOSFET Case: DFN1411-3 Very Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020C Low Input Capacitance Te

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2SJ264

 

 
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