DMP21D5UFD
MOSFET. Datasheet pdf. Equivalent
Type Designator: DMP21D5UFD
Marking Code: KP2
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 0.6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 0.5
nC
trⓘ - Rise Time: 4.3
nS
Cossⓘ -
Output Capacitance: 7.2
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1
Ohm
Package: X1-DFN1212-3
DMP21D5UFD
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMP21D5UFD
Datasheet (PDF)
..1. Size:185K diodes
dmp21d5ufd.pdf 
DMP21D5UFDP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceID V(BR)DSS RDS(ON) max Package Very Low Gate Threshold Voltage VGS(TH), 1.0V max TA = +25C Low Input Capacitance 1.0 @ VGS = -4.5V -600mA Fast Switching Speed 1.5 @ VGS = -2.5V -500mA ESD Protected Gate -20V X1-DFN1212-3 2.0 @ VGS = -1.8V -400mA Tot
5.1. Size:244K diodes
dmp21d5ufb4.pdf
DMP21D5UFB4P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID V(BR)DSS RDS(on) max Very Low Gate Threshold Voltage VGS(TH), 1.0V max TA = 25C Low Input Capacitance Fast Switching Speed 1.0 @ VGS = -4.5V -700mA Ultra-Small Surfaced Mount Package 1.5 @ VGS = -2.5V -600mA Ultra-low package profile, 0.4
8.1. Size:164K diodes
dmp21d0ut.pdf
A Product Line ofDiodes IncorporatedDMP21D0UT20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Footprint of just 3mm2 less than half the size of SOT23 ID Max 0.8mm profile ideal for low profile applications V(BR)DSS RDS(on) Max @ TA = 25C Low Gate Threshold Voltage (Note 4) Fast Switching Speed ESD Protected Gate
8.2. Size:230K diodes
dmp21d0ufd.pdf
A Product Line ofDiodes IncorporatedDMP21D0UFD20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Gate Threshold Voltage ID max Fast Switching Speed V(BR)DSS RDS(on) Max TA = 25C (Notes 4) ESD Protected Gate 3KV 495m @ VGS = -4.5V -1.14A Totally Lead-Free & Fully RoHS compliant (Note 1) Halogen and Antimony Free. G
8.3. Size:394K diodes
dmp21d0ufb4.pdf
DMP21D0UFB4 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Footprint of just 0.6mm2 13 times smaller than SOT23 V(BR)DSS RDS(ON) ID @ TA = +25C 0.4mm Profile Ideal for Low Profile Applications -0.77A 495m @ VGS = -4.5V Low Gate Threshold Voltage -20V 690m @ VGS = -2.5V -0.67A Fast Switching Speed ESD Protected
8.4. Size:342K diodes
dmp21d2ufa.pdf
DMP21D2UFA 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Package Profile, 0.4mm Maximum Package Height ID max V(BR)DSS RDS(ON) max 0.48mm2 Package Footprint, 16 Times Smaller than SOT23 TA = +25C 1.0 @ VGS = -4.5V Low On-Resistance 1.2 @ VGS = -2.5V Very Low Gate Threshold Voltage, 1.0V max -20V -330mA 1.6 @ VG
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