DMP3036SSD Specs and Replacement
Type Designator: DMP3036SSD
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 10.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 226 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SO-8
DMP3036SSD substitution
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DMP3036SSD datasheet
dmp3036ssd.pdf
DMP3036SSD P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance V(BR)DSS RDS(on) max TC = +25 C Low Input Capacitance 20m @ VGS = -10V -18.0A -30V Fast Switching Speed -15.0A 29m @ VGS = -5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description ... See More ⇒
dmp3036sfg.pdf
DMP3036SFG 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits ID max Low RDS(ON) ensures on state losses are minimized. V(BR)DSS RDS(ON) max TA = +25 C Small form factor thermally efficient package enables higher density end products. 20m @ VGS = -10V - 8.7 A -30V Occupies just 33% of the board area occupied by SO-8 enab... See More ⇒
dmp3036sfv.pdf
DMP3036SFV 30V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features Low RDS(ON) Ensures On State Losses Are Minimized ID Max BVDSS RDS(ON) Max Small Form Factor Thermally Efficient Package Enables Higher TC = +25 C Density End Products 20m @ VGS = -10V Occupies Just 33% of The Board Area Occupied by SO-8 -30V -30A 29m... See More ⇒
Detailed specifications: DMP3017SFG, DMP3017SFK, DMP3018SFK, DMP3028LFDE, DMP3028LK3, DMP3028LSD, DMP3035SFG, DMP3036SFG, IRF520, DMP3036SSS, DMP3037LSS, DMP3050LSS, DMP3050LVT, DMP3056L, DMP3065LVT, DMP3068L, DMP3085LSD
Keywords - DMP3036SSD MOSFET specs
DMP3036SSD cross reference
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History: DMP2066UFDE | IRFD9010
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