All MOSFET. DMP32D4SW Datasheet

 

DMP32D4SW MOSFET. Datasheet pdf. Equivalent


   Type Designator: DMP32D4SW
   Marking Code: P32D
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 0.25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 0.6 nC
   trⓘ - Rise Time: 11.5 nS
   Cossⓘ - Output Capacitance: 10.85 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: SOT-323

 DMP32D4SW Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMP32D4SW Datasheet (PDF)

 ..1. Size:244K  diodes
 dmp32d4sw.pdf

DMP32D4SW DMP32D4SW

DMP32D4SW30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Max Low On-ResistanceV(BR)DSS RDS(on) Max @ TA = 25C ESD Protected Gate 2.4 @ VGS = -10V -250mA Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -30V 4 @ VGS = -4.5V -200mA Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards fo

 6.1. Size:232K  diodes
 dmp32d4sfb.pdf

DMP32D4SW DMP32D4SW

DMP32D4SFB 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Max Low On-ResistanceV(BR)DSS RDS(on) Max @ TA = +25C Ultra-Small Surfaced Mount Package 2.4 @ VGS = -10V -400mA ESD Protected Gate -30V 4 @ VGS = -4.5V -300mA Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 16 @ VGS = -2.5V -50mA Halogen and Antimony Free

 6.2. Size:329K  diodes
 dmp32d4s.pdf

DMP32D4SW DMP32D4SW

DMP32D4S30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Max Low On-ResistanceV(BR)DSS RDS(on) Max @TA = +25C ESD Protected Gate to 2kV 2.4 @ VGS = -10V -300mA Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -30V 4 @ VGS = -4.5V -250mA Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standa

 8.1. Size:524K  diodes
 dmp32d5sfb.pdf

DMP32D4SW DMP32D4SW

DMP32D5SFB 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Max Low On-Resistance V(BR)DSS RDS(ON) Max @ TA = +25C Ultra-Small Surfaced Mount Package 2.4 @ VGS = -10V -400mA -30V ESD Protected Gate -300mA 4 @ VGS = -4.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (No

 8.2. Size:328K  diodes
 dmp32d5lfa.pdf

DMP32D4SW DMP32D4SW

DMP32D5LFA 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.4mm Ultra Low Profile Package for Thin Application ID V(BR)DSS RDS(on) 0.48mm2 Package Footprint, 16 Times Smaller Than SOT23 TA = +25C 1.5 @ VGS = -4.5V -0.3 A Low VGS(th), can be Driven Directly from a Battery -30V -0.2 A 2.5 @ VGS = -2.5V Low RDS(ON) ESD Protect

 8.3. Size:339K  diodes
 dmp32d9ufz.pdf

DMP32D4SW DMP32D4SW

DMP32D9UFZP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Package Profile, 0.42mm Maximum Package height ID max V(BR)DSS RDS(ON) max 0.62mm x 0.62mm Package Footprint TA = +25C 5 @ VGS = -4.5V Low On-Resistance6 @ VGS = -2.5V Very low Gate Threshold Voltage, 1.0V max -30V -0.2A 7 @ VGS = -1.8V ESD Protected Gat

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