DMP6110SSD
MOSFET. Datasheet pdf. Equivalent
Type Designator: DMP6110SSD
Marking Code: P6110SD
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 3.3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 8.2
nC
trⓘ - Rise Time: 23
nS
Cossⓘ -
Output Capacitance: 57
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.105
Ohm
Package:
SO-8
DMP6110SSD
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMP6110SSD
Datasheet (PDF)
..1. Size:377K diodes
dmp6110ssd.pdf 
DMP6110SSD P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance V(BR)DSS RDS(on) max TA = +25C Low Input Capacitance 105m @ VGS = -10V -3.3 A Fast Switching Speed -60V 130m @ VGS = -4.5V -3.0 A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Descriptio
5.1. Size:276K diodes
dmp6110sss.pdf
DMP6110SSS60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-ResistanceV(BR)DSS RDS(ON) max TA = +25C Low Gate Threshold Voltage Low Input Capacitance 110m @ VGS = -10V -4.5A -60V Fast Switching Speed 130m @ VGS = -4.5V -4.2A Low Input/ Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes
6.1. Size:327K diodes
dmp6110svt.pdf
DMP6110SVT P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max V(BR)DSS RDS(ON) Max Low Input Capacitance TC = +25C Fast Switching Speed 105m @ VGS = -10V -7.3A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) -60V 130m @ VGS = -4.5V -6.
9.1. Size:288K diodes
dmp6185se.pdf
DMP6185SE60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) TA = +25C Low on-resistance Fast switching speed 150m @ VGS= -10V -3A -60V Lead-Free Finish; RoHS compliant (Notes 1 & 2) 185m @ VGS= -4.5V -2.7A Halogen and Antimony Free. Green
9.2. Size:308K diodes
dmp6185sk3.pdf
DMP6185SK360V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) Low on-resistance TC = +25C Fast switching speed 150m @ VGS = -10V -9.4A -60V Totally Lead-Free & Fully RoHS compliant (Note 1 & 2) 185m @ VGS = -4.5V -8.5A Halogen and Antimony Free. Green
9.3. Size:527K diodes
dmp6185seq.pdf
DMP6185SEQ 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID 100% Unclamped Inductive Switch (UIS) test in production BVDSS RDS(on) TA = +25C Low on-resistance Fast switching speed 150m @ VGS= -10V -3A -60V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 185m @ VGS= -4.5V -2.7A Halogen and Antimony Free. Green D
9.4. Size:188K diodes
dmp6180sk3.pdf
DMP6180SK360V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-ResistanceV(BR)DSS RDS(on) max TC = +25C Low Input Capacitance Totally Lead-Free & Fully RoHS compliant (Note 1 & 2) 110m @ VGS = -10V -14A -60V Halogen and Antimony Free. Green Device (Note 3) 140m @ VGS = -4.5V -12A Qualified to AEC-Q101 Stand
9.5. Size:430K diodes
dmp610dl.pdf
DMP610DL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I DBV R Max DSS DS(ON) Low Gate Threshold Voltage T = +25C A-60V 10 @ V = -5V -180mA Low Input Capacitance GS Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Fr
9.6. Size:435K diodes
dmp6180sk3q.pdf
DMP6180SK3Q 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-Resistance BVDSS RDS(ON) Max TC = +25C Low Input Capacitance Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2) 110m @ VGS = -10V -14A -60V Halogen and Antimony Free. Green Device (Note 3) 140m @ VGS = -4.5V -12A Qualified to AEC-Q101 Stand
9.7. Size:254K inchange semiconductor
dmp6180sk3-13.pdf
isc P-Channel MOSFET Transistor DMP6180SK3-13FEATURESStatic drain-source on-resistance:RDS(on)110m(@V = -10V; I = -12A)GS DAdvanced trench process technology100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower Management FunctionsDC / DC ConvertersABSOLUTE MAXIMUM RATINGS(T =25)
9.8. Size:266K inchange semiconductor
dmp6180sk3.pdf
isc P-Channel MOSFET Transistor DMP6180SK3FEATURESDrain Current I = -14A@ T =25D CDrain Source Voltage-: V = -60V(Min)DSSStatic Drain-Source On-Resistance: R =110m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu
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