All MOSFET. SFP9614 Datasheet

 

SFP9614 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SFP9614
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 1.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: TO220

 SFP9614 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SFP9614 Datasheet (PDF)

 ..1. Size:503K  samsung
 sfp9614.pdf

SFP9614 SFP9614

Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 4.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = -1. 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -250V Low RDS(ON) : 3.5 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V

 8.1. Size:497K  samsung
 sfp9610.pdf

SFP9614 SFP9614

Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = -1.75 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -200V Low RDS(ON) : 2.084 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic

 9.1. Size:222K  fairchild semi
 sfp9640l.pdf

SFP9614 SFP9614

SFP9640LAdvanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input CapacitancesID = -11 A Improved Gate Charge Extended Safe Operating AreaTO-220 Lower Leakage Current : -10uA (Max.) @ VDS= -200V Lower RDS(ON) : 0.383 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maxim

 9.2. Size:497K  samsung
 sfp9620.pdf

SFP9614 SFP9614

Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -3.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -200V Low RDS(ON) : 1.111 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic

 9.3. Size:495K  samsung
 sfp9634.pdf

SFP9614 SFP9614

Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 1.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = -5.0 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -250V Low RDS(ON) : 0.876 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic

 9.4. Size:500K  samsung
 sfp9644.pdf

SFP9614 SFP9614

Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = -8.6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -250V Low RDS(ON) : 0.549 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic

 9.5. Size:504K  samsung
 sfp9624.pdf

SFP9614 SFP9614

Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 2.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = -2.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -250V Low RDS(ON) : 1.65 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V

 9.6. Size:502K  samsung
 sfp9640.pdf

SFP9614 SFP9614

Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -11 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -200V Low RDS(ON) : 0.344 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V

 9.7. Size:500K  samsung
 sfp9630.pdf

SFP9614 SFP9614

Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = -6.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -200V Low RDS(ON) : 0.581 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic

Datasheet: SFM9210 , SFM9214 , SFP2955 , SFP9510 , SFP9520 , SFP9530 , SFP9540 , SFP9610 , 8N60 , SFP9620 , SFP9624 , SFP9630 , SFP9634 , SFP9640 , SFP9644 , SFP9Z14 , SFP9Z24 .

 

 
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