All MOSFET. DMT6016LPS Datasheet

 

DMT6016LPS MOSFET. Datasheet pdf. Equivalent


   Type Designator: DMT6016LPS
   Marking Code: T6016LS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.23 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 14.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.4 nC
   trⓘ - Rise Time: 5.2 nS
   Cossⓘ - Output Capacitance: 282 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: POWERDI5060-8

 DMT6016LPS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMT6016LPS Datasheet (PDF)

 ..1. Size:602K  diodes
 dmt6016lps.pdf

DMT6016LPS DMT6016LPS

DMT6016LPS 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package - Cooler Running Applications V(BR)DSS RDS(ON) TC = +25C High Conversion Efficiency 15m @ VGS = 10V 32 A Low RDS(ON) Minimizes On-State Losses 60V 24 A 24m @ VGS = 4.5V Low Input Capacitance Fast Switching Speed

 0.1. Size:639K  1
 dmt6016lps-13.pdf

DMT6016LPS DMT6016LPS

DMT6016LPS 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package - Cooler Running Applications V(BR)DSS RDS(ON) TC = +25C High Conversion Efficiency 15m @ VGS = 10V 32 A Low RDS(ON) Minimizes On-State Losses 60V 24 A 24m @ VGS = 4.5V Low Input Capacitance Fast Switching Speed

 6.1. Size:296K  diodes
 dmt6016lss.pdf

DMT6016LPS DMT6016LPS

DMT6016LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25C 18m @ VGS = 10V 9.2 A Fast Switching Speed 60V 7.5 A 28m @ VGS = 4.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3

 6.2. Size:337K  diodes
 dmt6016lfdf.pdf

DMT6016LPS DMT6016LPS

DMT6016LFDF60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max 100% Unclamped Inductive Switch (UIS) test in production V(BR)DSS RDS(ON) max TA = +25C 0.6mm profile ideal for low profile applications 16m @ VGS = 10V 8.9A PCB footprint of 4mm2 60V 27m @ VGS = 4.5V 6.8A Low On-Resistance Totally Lead-Free & Ful

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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