DSKTJ07
MOSFET. Datasheet pdf. Equivalent
Type Designator: DSKTJ07
Marking Code: BT_BU
Type of Transistor: JFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 0.002
A
Tjⓘ - Maximum Junction Temperature: 80
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1500
Ohm
Package: TSSSMINI3-F2-B
DSKTJ07
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DSKTJ07
Datasheet (PDF)
..1. Size:328K panasonic
dsktj07.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DSKTJ07Silicon N-channel Junction FETFor impedance conversion in low frequency Features Package Low noise voltage NV Code Contributes to miniaturization of sets, reduction of component count. TSSSMini3-F2-B Eco-friendly Halogen-free package Pin Name 1: Drain Packaging 2: Source Emb
8.1. Size:328K panasonic
dsktj05.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DSKTJ05Silicon N-channel Junction FETFor impedance conversion in low frequency Features Package High speed stability time Code Contributes to miniaturization of sets, reduction of component count. TSSSMini3-F2-B Eco-friendly Halogen-free package Pin Name 1: Drain Packaging 2: Source
8.2. Size:329K panasonic
dsktj08.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DSKTJ08Silicon N-channel Junction FETFor impedance conversion in low frequency Features Package High speed stability time Code Contributes to miniaturization of sets, reduction of component count. TSSSMini3-F2-B Eco-friendly Halogen-free package Pin Name 1: Drain Packaging 2: Source
8.3. Size:328K panasonic
dsktj04.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DSKTJ04Silicon N-channel Junction FETFor impedance conversion in low frequency Features Package Low noise voltage NV and high speed stability time Code Contributes to miniaturization of sets, reduction of component count. TSSSMini3-F2-B Eco-friendly Halogen-free package Pin Name 1: Drain
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