DSKTJ07 Spec and Replacement
Type Designator: DSKTJ07
Type of Transistor: JFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.002 A
Tj ⓘ - Maximum Junction Temperature: 80 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1500 Ohm
Package: TSSSMINI3-F2-B
DSKTJ07 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DSKTJ07 Specs
dsktj07.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). DSKTJ07 Silicon N-channel Junction FET For impedance conversion in low frequency Features Package Low noise voltage NV Code Contributes to miniaturization of sets, reduction of component count. TSSSMini3-F2-B Eco-friendly Halogen-free package Pin Name 1 Drain Packaging 2 Source Emb... See More ⇒
dsktj05.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). DSKTJ05 Silicon N-channel Junction FET For impedance conversion in low frequency Features Package High speed stability time Code Contributes to miniaturization of sets, reduction of component count. TSSSMini3-F2-B Eco-friendly Halogen-free package Pin Name 1 Drain Packaging 2 Source ... See More ⇒
dsktj08.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). DSKTJ08 Silicon N-channel Junction FET For impedance conversion in low frequency Features Package High speed stability time Code Contributes to miniaturization of sets, reduction of component count. TSSSMini3-F2-B Eco-friendly Halogen-free package Pin Name 1 Drain Packaging 2 Source ... See More ⇒
Detailed specifications: DN3545 , DN3765 , DSK3J02 , DSK5J01 , DSK5J01X0L , DSK9J01 , DSKTJ04 , DSKTJ05 , IRFP450 , DSKTJ08 , 2SK3591 , 36N06 , 65N06 , FCP125N65S3 , FKI10300 , FMH08N80E , FQU10N20 .
Keywords - DSKTJ07 MOSFET specs
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