IPD038N06N3 MOSFET. Datasheet pdf. Equivalent

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IPD03N03LA G IPS03N03LA GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 25 VDS Ideal for high-frequency dc/dc convertersR (SMD Version) 3.2mDS(on),max Qualified according to JEDEC1) for target applicationsI 90 AD N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance 175 C operating temperatu

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TypeIPD036N04L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 3.6mDS(on),max Optimized technology for DC/DC convertersI 90 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) 100% Av

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IPD033N06NMOSFETD-PAKOptiMOSTM Power-Transistor, 60 VFeatures Optimized for synchronous rectificationtab 100% avalanche tested Superior thermal resistance N-channel, normal level1 2 Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant3 Halogen-free according to IEC61249-2-21Table 1 Key Performance Paramete

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IPD036N04LGwww.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.0050 at VGS = 10 V 85COMPLIANT 40 80 nC0.0065 at VGS = 4.5 V 70APPLICATIONS Synchronous Rectification Power SuppliesDTO-252 GG D S SN-Channel MOSFETABSOLUTE MAXIMUM

isc N-Channel MOSFET Transistor IPD031N03L, IIPD031N03LFEATURESStatic drain-source on-resistance:RDS(on)3.1mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 30 VDSSV

isc N-Channel MOSFET Transistor IPD034N06N3IIPD034N06N3FEATURESStatic drain-source on-resistance:RDS(on)3.4mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltag

isc N-Channel MOSFET Transistor IPD036N04L, IIPD036N04LFEATURESStatic drain-source on-resistance:RDS(on)3.6mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60 VDSSV

isc N-Channel MOSFET Transistor IPD031N06L3, IIPD031N06L3FEATURESStatic drain-source on-resistance:RDS(on)3.1mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 6

isc N-Channel MOSFET Transistor IPD033N06N, IIPD033N06NFEATURESStatic drain-source on-resistance:RDS(on)3.3mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONOptimized for synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou