IPD082N10N3 Datasheet and Replacement

isc N-Channel MOSFET Transistor IPD082N10N3,IIPD082N10N3FEATURESStatic drain-source on-resistance:RDS(on)8.2mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

IPP086N10N3 G IPI086N10N3 GIPB083N10N3 G IPD082N10N3 GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO 252) 8.2 mW Excellent gate charge x R product (FOM)DS(on)ID 80 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JED

IPP086N10N3 G IPI086N10N3 GIPB083N10N3 G IPD082N10N3 GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO 252) 8.2 mW Excellent gate charge x R product (FOM)DS(on)ID 80 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JED

pe # ! ! (TM) #:A03 B53 m D n) m xQ ( @D9=9J54 D538>?F5BD5BCDQ H35

pe % # ! % (>.;?6?@%>EFeaturesV 4 D Q 2CD CG:D49:?8 ') - . 7@B -'*-R m D n) m xQ ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BCI D1)Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?CQ ( 492??6= =@8:4 =6F6=Q H46==6?D 82D6 492B86 H R AB@5E4D ) ' D n)Q /6BI =@G @? B6C:CD2?46 RD n)Q F2=2?496 D6CD65Q *3 7B66 A=2D:?8 , @"- 4@>A=:2?DType #* (

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPD088N06N3GFEATURESWith TO-252(DPAK) packagingWith low gate drive requirementsVery high commutation ruggedness100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLCD&PDP TVPC silverboxUPS and solarABSOLUTE

isc N-Channel MOSFET Transistor IPD088N06N3,IIPD088N06N3FEATURESStatic drain-source on-resistance:RDS(on)8.8mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60