IPD082N10N3 Datasheet and Replacement
Type Designator: IPD082N10N3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 523 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0082 Ohm
Package: TO-252
IPD082N10N3 substitution
IPD082N10N3 Datasheet (PDF)
ipd082n10n3.pdf

isc N-Channel MOSFET Transistor IPD082N10N3,IIPD082N10N3FEATURESStatic drain-source on-resistance:RDS(on)8.2mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
ipp086n10n3g ipi086n10n3g ipb083n10n3g ipd082n10n3g.pdf

IPP086N10N3 G IPI086N10N3 GIPB083N10N3 G IPD082N10N3 GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO 252) 8.2 mW Excellent gate charge x R product (FOM)DS(on)ID 80 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JED
ipp086n10n3-g ipi086n10n3-g ipb083n10n3-g ipd082n10n3-g.pdf

IPP086N10N3 G IPI086N10N3 GIPB083N10N3 G IPD082N10N3 GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO 252) 8.2 mW Excellent gate charge x R product (FOM)DS(on)ID 80 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JED
ipd088n06n3 ipd088n06n3g.pdf

pe # ! ! (TM) #:A03 B53 m D n) m xQ ( @D9=9J54 D538>?F5BD5BCDQ H35
Datasheet: IPD038N06N3 , IPD046N08N5 , IPD048N06L3 , IPD050N10N5 , IPD053N08N3 , IPD068N10N3 , IPD068P03L3 , IPD079N06L3 , IRF730 , IPD088N06N3 , IPD096N08N3 , IPD110N12N3 , IPD122N10N3 , IPD127N06L , IPD135N08N3 , IPD16CN10N , IPD180N10N3 .
Keywords - IPD082N10N3 MOSFET datasheet
IPD082N10N3 cross reference
IPD082N10N3 equivalent finder
IPD082N10N3 lookup
IPD082N10N3 substitution
IPD082N10N3 replacement
History: TPC8073 | MTM13127



LIST
Last Update
MOSFET: JMSL0406AKQ | JMSL0406AK | JMSL0406AGQ | JMSL0406AGDQ | JMSL0406AGD | JMSL04060GDQ | JMSL04055UQ | JMSL04055GQ | JMSL0403PU | JMSL0403PK | JMSL0403PGQ | JMSL0403PG | JMSL0403AU | JMSL0403AGQ | JMSL0403AG | JMTQ90N02A
Popular searches
a1633 transistor | 2sa844 | 2sc1327 | 2sc3855 | 2sc945 transistor equivalent | 2sd427 | mje15032 equivalent | 2sc4834