IPD096N08N3 PDF and Equivalents Search

 ..1. Size:439K  infineon
 ipd096n08n3.pdf

# ! ! (TM) # A0... See More ⇒

 ..2. Size:243K  inchange semiconductor
 ipd096n08n3.pdf

isc N-Channel MOSFET Transistor IPD096N08N3,IIPD096N08N3 FEATURES Static drain-source on-resistance RDS(on) 9.6m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 80... See More ⇒

 0.1. Size:354K  infineon
 ipd096n08n3g.pdf

IPD096N08N3 G OptiMOS(TM)3 Power-Transistor Product Summary Features VDS 80 V Ideal for high frequency switching RDS(on),max 9.6 mW Optimized technology for DC/DC converters ID 73 A Excellent gate charge x R product (FOM) DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target ... See More ⇒

 9.1. Size:538K  1
 ipd090n03lg ipf090n03lg ips090n03lg ipu090n03lg.pdf

Type IPD090N03L G IPF090N03L G IPS090N03L G IPU090N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 9 m DS(on),max Optimized technology for DC/DC converters I 40 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low... See More ⇒

 9.2. Size:413K  infineon
 ipd09n03la ipf09n03la ips09n03la ipu09n03la.pdf

IPD09N03LA IPF09N03LA IPS09N03LA IPU09N03LA OptiMOS 2 Power-Transistor Product Summary Features V 25 V DS Ideal for high-frequency dc/dc converters R (SMD version) 8.6 m DS(on),max Qualified according to JEDEC1) for target application I 50 A D N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Superior thermal resistance 175 C ... See More ⇒

 9.3. Size:1332K  infineon
 ipd090n03lg6.pdf

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 9.4. Size:750K  infineon
 ipd090n03lge8177.pdf

Type IPD090N03L G E8177 OptiMOS 3 Power-Transistor Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 9 mW Optimized technology for DC/DC converters ID 40 A Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Aval... See More ⇒

 9.5. Size:668K  infineon
 ipd090n03lg .pdf

pe $ " $;B1= '=- >5>?;= $=;0@/? &@99-=D Features D Q 2CD CG D49 ?8 ') - . 7@B -'*- m D n) m x Q ) AD > J65 D649?@=@8I 7@B 4@?F6BD6BC 4 D 1) Q + E2= 7 65 244@B5 ?8 D@ $ 7@B D2B86D 2AA= 42D @?C Q ( 492??6= =@8 4 =6F6= Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n) Q /6BI =@G @? B6C CD2?46 D n) Q F2=2?496 B2D65 Q *3 7B66 A=2D ?8 Type #* ( & ! Package G O 11 M... See More ⇒

 9.6. Size:712K  infineon
 ipd090n03l.pdf

Type IPD090N03L G E8177 OptiMOS 3 Power-Transistor Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 9 mW Optimized technology for DC/DC converters ID 40 A Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Aval... See More ⇒

 9.7. Size:1347K  infineon
 ipd090n03lg9.pdf

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 9.8. Size:242K  inchange semiconductor
 ipd090n03l.pdf

isc N-Channel MOSFET Transistor IPD090N03L, IIPD090N03L FEATURES Static drain-source on-resistance RDS(on) 9m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 30 V DSS V Ga... See More ⇒