2SK1499 MOSFET. Datasheet pdf. Equivalent

   Type Designator: 2SK1499
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 115 nC
   trⓘ - Rise Time: 130 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: TO3P

2SK1499 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SK1499 Datasheet (PDF)

..1. Size:406K nec
2sk1499 2sk1500.pdf

8.1. Size:581K renesas
2sk1493-z 2sk1494-z.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.2. Size:390K nec
2sk1491.pdf